Allicdata Part #: | HUFA76419P3-ND |
Manufacturer Part#: |
HUFA76419P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 29A TO-220AB |
More Detail: | N-Channel 60V 29A (Tc) 75W (Tc) Through Hole TO-22... |
DataSheet: | HUFA76419P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 29A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The HUFA76419P3 is a single-gate field-effect transistor (FET) that plays an important role in many applications such as power management, switches, and amplifiers. This transistor is designed to be operated at a high temperature, is highly reliable, and has a very low on resistance. It is also engineered to operate in a wide range of voltages and currents, making it suitable for many different circuits and applications.
The basic principle of operation of this type of transistor is called the "source-drain" method. In this method, a gate voltage is applied to the transistor structure, which controls the flow of electrons from the drain to the source. As the gate voltage is increased, the current that flows through the transistor increases, and vice versa. The advantage of using this type of transistor is that it is able to handle large voltage and current variations without displaying any signs of degradation or breakdown. This makes it very useful in high power applications, where high current and voltages need to be handled at the same time.
One of the most common applications of the HUFA76419P3 is in power management. The transistor is able to regulate the power output of a circuit without having to use additional components. This is done by modulating the gate voltage, forcing the transistor to switch between being on and off. This enables the circuit to be efficiently managed, providing smooth, linear power output to the application. In addition, this type of circuit is able to respond to small changes in power demand quickly and efficiently.
An additional application where the HUFA76419P3 can be used is as an amplifier. By applying a low level signal to the gate voltage of the transistor, a high level, amplified signal can be achieved. This can be used in a variety of radio, audio, and television circuits, as well as other circuits that require high power signals. As the transistor can handle high current and voltages, it is often chosen for output stages as it can achieve a high level of power output while still maintaining a low level of distortion.
The HUFA76419P3 is a useful single-gate field-effect transistor that has many applications in power management, switching, and amplifying. Thanks to its ability to handle high powers and respond quickly to changes in power demand, it is an indispensable component in many complex circuits. As a result, this device is likely to remain a popular choice for designers working on power management, switching, and amplifying applications.
The specific data is subject to PDF, and the above content is for reference
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