HUFA76409D3

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The HUFA76409D3 is a technology innovating single MOSFET that enhances the electrical performance of circuit designs. This FET model offers improved on-resistance, lower gate charge, superior Avalanche energy and ruggedness, making it suitable for a wide range of applications.

The N-channel UtilityFET™ (U-FET™) features optimized linear drain currents up to 200mA, and can be flexibly used to switch, amplify, regulate, and more. The HUFA76409D3 features a low on-resistance RDS(on) of 7.6 mΩ at VGS of 4.5V, allowing power designers to optomise the gate charge of their system while increasing the power efficiency. It has a breakdown voltage of 400V and is available in a power package. It can operate at a temperature range from -55°C - 175°C, and so is ideal for applications with peaks of high temperature.

Application Field

A single N-channel MOSFET is an important component used in many different applications. It can be used to switch large currents within a circuit, acting as an electronic switch. The HUFA76409D3 is especially suitable for use in higher voltage, higher current, and higher frequency applications. Some of its applications include:

• Automotive electronics
• DC-DC converters
• AC-DC power supplies
• DC switching power supplies
• High frequency switching
• Laser drivers
• High voltage power supplies

Working Principle

MOSFETs, like the HUFA76409D3, are a type of transistor device. MOSFET stands for "metal-oxide-semiconductor field-effect transistor". The device works due to the interaction between the electric field of the transistor gate and the charge carriers that flow through the semiconductor channel region under the influence of a source and drain voltage. This interaction ultimately amplifies or controls the current of the drain-source circuit. The transistor gate acts as an electronically controllable switch, which can open and close the drain-source circuit depending on the voltage applied to the gate.

The working principle of the single MOSFET HUFA76409D3 is similar to that of standard MOSFETs. It has three terminals designated as source, gate, and drain. When a voltage is applied between the source and the gate terminals, a conductive channel is formed between the source and the drain region. This causes electrons to flow from source to the drain, and therefore current flowing from drain to source.

The drain-source current (IDS) and drain-source voltage (VDS) are both dependent on the gate voltage, VGS. This allows the FET to be operated as an electronically controlled switch. The channel resistance between source and drain is also impacted by the gate voltage. When VGS is increased, the resistance between the drain and the source terminals increases, allowing you to control the power supplied to the device and thus the amount of current drawn.

The HUFA76409D3 is a higher power FET device than the standard MOSFET, thus it features high current levels up to 200mA and higher avalanche energy performance. Its optimized on-resistance value (RDS(ON)) of 7.6 mΩ at VGS of 4.5V enable it to deliver higher efficiency together with low gate interface.

Conclusion

The HUFA76409D3 is an ideal single MOSFET for applications that require higher voltage, current, and frequency levels. It offers improved on-resistance, lower gate charge, superior Avalanche energy, and robustness in a power package. This optimized linear drain current model allows for flexible use in applications such as automotive electronics, DC-DC converters, AC-DC power supplies, high voltage power supplies, and more. The working principle of this FET is similar to that of the standard MOSFET, with an adjustable resistance between its source and drain according to the voltage applied to the gate.

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