HUFA76407D3S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HUFA76407D3S is a kind of field effect transistor (FET), belonging to single transistor. This type of transistor usually consists of three pins referred to as source, gate and drain. Voltage being applied to the gate will control the current flowing through the source to drain. HUFA76407D3S combines field effect technology, high input impedance and low on-resistance that make it an ideal switch to control current.

Introduction to HUFA76407D3S

HUFA76407D3S is a N-Channel enhancement mode MOSFET. It operates at 6 V and its on-resistance is around 75mΩ. It can handle a maximum continuous drain current of 7A. In addition, its maximum drain-source breakdown voltage is 600V. The maximum operating temperature of this FET is 175 °C which is also an ideal choice for industrial applications. The package size of this device is 8-Lead PDIP, 8-Lead SOIC and 8-Lead MSOP, ensuring a good electrical and mechanical connection between the device and the PCB.

Applications of HUFA76407D3S

HUFA76407D3S is used in various applications such as motor control, power regulation, DC to DC converter, audio amplifier and also power supply control. It provides high surge current, high efficiency and thermal stability due to its built-in thermal shutdown. It is also used in battery operated devices owing to its low voltage drive capability. In addition, it is suitable for switching applications where fast rise and fall times are required.

Working Principle of HUFA76407D3S

HUFA76407D3S works on the principle of controlling the voltage at the gate terminal of the FET to control the current that flows through the FET. The working principle is quite simple. When a positive voltage is applied to the gate terminal of the FET, it creates an electric field between the gate and the source, thus creating a conductive layer from the source to the drain. This conductive layer helps in increasing the conductivity of the channel, thereby increasing the current that flows from source to drain.

Similarly, when a negative voltage is applied to the gate terminal of the FET, it creates an electric field from the drain to the source. This electric field opposes the flow of current from the source to drain, thereby decreasing the conductivity of the channel and thus decreasing the current that flows from source to drain.

Thus, by controlling the voltage at gate terminal, the current between source and drain can be controlled. HUFA76407D3S offers less voltage drop due to its low on-resistance and can handle large currents due to its high drain current capability.

Conclusion

HUFA76407D3S is an ideal switch to control current in various applications due to its combination of field effect technology, high input impedance and low on-resistance. It can handle 7A of maximum continuous drain current and operates at 6V. It is used extensively in battery operated devices, motor control and audio amplifier due to its low voltage drive capability and fast rise and fall times. The device works on the principle of controlling the voltage at the gate terminal of the FET.

The specific data is subject to PDF, and the above content is for reference