Allicdata Part #: | HUFA76423P3-ND |
Manufacturer Part#: |
HUFA76423P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 35A TO-220AB |
More Detail: | N-Channel 60V 35A (Tc) 85W (Tc) Through Hole TO-22... |
DataSheet: | HUFA76423P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The HUFA76423P3 is a high-performance, high- can operated amplifier that provides an array of features and performance benefits. Specifically designed for high power applications, this device is suitable for use in both general and high-speed applications. Furthermore, this product features a very high transition frequency, making it an ideal choice for applications requiring a low noise amplifier or a switched-mode amplifier.
The HUFA76423P3 operates with a wide range of power supply voltages, ranging from 4.5V to 16V, which makes it suitable for a variety of applications. The device has an adjustable gain bandwidth product ranging from 3 GHz to 20 GHz, making it suitable for applications requiring high-speed performance. Additionally, the HUFA76423P3 has a stable bias voltage and current range, allowing it to work with a wide variety of bias settings.
The HUFA76423P3 is a field-effect transistor (FET) device, specifically an N-channel enhancement-mode power MOSFET. This device works by using an electric field to control the flow of current between two layers of semiconductor material. More specifically, the HUFA76423P3 is a voltage-controlled device, which means that the transfer of current is based on the voltage applied to the gate of the device. In operation, the gate voltage (VGS) of the HUFA76423P3 must be maintained within a certain range. If the voltage is too low, the device is turned off; and if the voltage is too high, the device is turned on. When turned on, the gate of the device acts as a resistor, allowing current to flow from the source to the drain.
When used as an amplifier, the HUFA76423P3 acts as a voltage or current amplifier, depending on how it is biased. In voltage mode, the input signal is applied to the gate of the device, and the output is taken from the drain. This type of amplifier is useful for providing gain at low frequencies. In current mode, the input is applied to the source, and the output is taken from the drain. This type of amplifier is useful for providing gain at high frequencies.
In addition to its capability as an amplifier, the HUFA76423P3 can also be used as a switching device. This device can be used in circuit applications that require efficient power switching, such as DC-DC converters. Unlike a traditional mechanical switch, the HUFA76423P3 can be switched on or off quickly and accurately, with no contact bounce or damage to the joint.
Overall, the HUFA76423P3 is a high-performance, single N-channel enhancement-mode power MOSFET. The device is capable of wide operating voltages and is suitable for both general and high-speed applications. Additionally, the device can be used as both an amplifier and a switching device, depending on the circuit application requirements. With its wide range of features, the HUFA76423P3 provides a versatile solution for any number of applications.
The specific data is subject to PDF, and the above content is for reference
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