Allicdata Part #: | HUFA76413DK8T-F085-ND |
Manufacturer Part#: |
HUFA76413DK8T-F085 |
Price: | $ 0.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 5.1A 8-SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 5.1A 2.5W Surf... |
DataSheet: | HUFA76413DK8T-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.56366 |
Series: | Automotive, AEC-Q101, UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A |
Rds On (Max) @ Id, Vgs: | 49 mOhm @ 5.1A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Power - Max: | 2.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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HUFA76413DK8T-F085 is a FET (Field Effect Transistor) array manufactured by Fairchild Semiconductor, designed for a variety of applications. This FET array is suitable for use in a wide range of electrical and electronic systems, including industrial, and consumer electronics. FET arrays are comprised of multiple Field Effect Transistors (FETs) that are connected together in an integrated circuit. They are used as amplifiers and switches, typically in digital circuits requiring multiple transistors.
The HUFA76413DK8T-F085 is a monolithic CMOS (Complementary Metal-Oxide Semiconductor) FET Array, consisting of eight independent N-channel FETs; four with a logic ‘1’ input, and four with a logic ‘0’ input. It is a low on-resistance, programmable, low voltage N-channel FET Array, featuring low power dissipation and good cut-off linearity. It also has a low gate source voltage and improved drain-source breakdown voltage.
The device is designed to be operated in a wide range of biases, allowing for flexibility in a variety of applications. It has an operating temperature range of -55°C to 155°C, and is guaranteed to have a maximum junction temperature of 175°C. The HUFA76413DK8T-F085 is available in hermetically sealed ceramic packages, designed for use in high-temperature and radiation-resistant applications.
The HUFA76413DK8T-F085 works by applying the voltage to the gate of the FET. When a voltage is applied, it increases the conductivity across the channel, allowing current to flow between the source and drain. When the voltage is removed, the FET is turned off, and the current is shut off. By changing the voltage applied to the gate, the FET can be turned on and off, and the amount of current through the channel can be controlled. By combining multiple FETs into a single integrated circuit, the same effects can be achieved, but on multiple channels.
The HUFA76413DK8T-F085 can be used for a wide range of applications, such as in power management, low voltage logic level interfacing, and low voltage switch control. It is also well-suited for data transmission applications, as well as for static RAM (Random Access Memory), and dynamic RAM applications.
The HUFA76413DK8T-F085 offers the advantages of low power consumption, low voltage operation, high stability, and high performance. It can be used in a variety of systems, ranging from industrial to consumer products, and is a cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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