IPB80N04S204ATMA2

IPB80N04S204ATMA2 is a surface mounted N-channel MOSFET,which is made using Pb-Free (RoHS compliant) planar technology. It is designed with advanced trench technology that provides excellent RDS(ON) as well as gate-charging characteristics. The application field of this device is generally related to power management for integrated circuits.

MOSFETs are a type of field-effect transistor (FET) which uses a gate voltage to control the flow of current from source to drain. The MOSFET includes the gate, drain, and source pins. Voltage applied to the gate opens the switch, allowing current flow from source and drain in a manner that depends on the gate voltage. The main advantage of a MOSFET is its low power dissipation, making them suitable for power switching circuits. In particular, N-channel MOSFETs are used for high-current low-voltage applications such as switching microprocessor power supplies.

The IPB80N04S204ATMA2 is designed to be used as a power switch or power management solution. It is suitable for use in any application where low-power input is required and controlled. With a drain-source current of 4A and a drain-source voltage of 80V, it is suitable for use as a switch in most power management applications. The device has an on-state resistance (RDS(ON)) of 0.017 Ohms and a gate threshold voltage (VGSth) of 1.2V. This makes it an ideal choice for low-power power control applications.

In terms of working principle, the IPB80N04S204ATMA2 is a N-channel enhancement mode MOSFET. As a voltage is applied to the gate, it induces an electric field which attracts electrons, allowing current to flow from source to drain. As the gate voltage is increased, the electric field strength increases and the amount of current flowing in the MOSFET increases accordingly. Thus, the device acts as a switch, providing a low on-resistance when it is on and a high off-resistance when it is off.

The IPB80N04S204ATMA2 is intended for use in a wide range of applications such as PC power supplies, automotive applications, and switch mode power supplies. Due to its low on-resistance and high gate-charging characteristics, the IPB80N04S204ATMA2 is a capable and reliable device for power management and control.