IPD50N06S4L08ATMA1

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IPD50N06S4L08ATMA1 is a power MOSFET Transistor. It is an enhancement-mode vertical N-channel MOSFET transistor (single) which utilizes an advanced trench technology to provide excellent RDS(on) and low gate charge. It is characterized by a low on-state resistance, fast switching speed and good thermal stability.

The product is wide used in high power DC-DC converters, solenoid/valve control and low voltage motor drive applications which require high speed switching, low electrical noise performance, and a dense board design.

Application Field

The IPD50N06S4L08ATMA1 has many applications in the industry. It has excellent features and is ideal for higher headroom and high power applications. It can be used in DC-DC converters, relay control, H-bridge, lighting equipment, printer power supplies, networking, server and notebook power supplies, polarity protection circuits etc.

The device is also suitable for automotive applications and can be used in modules such as power converters, motor control circuits, solenoid drives and various load control applications.

Working Principle

The IPD50N06S4L08ATMA1 is a vertical power MOSFET transistor which utilizes an advanced trench technology. The vertical structure and the high channel density helps to reduced the RDS(on) and minimize the on-state conduction losses. The device also has a lower gate charge which reduces the switching losses and increases the switching speed.

The device has an input logic level gate which features fast switching times, reducing switching losses and provides low electrical noise performance. The N-channel type device offers higher power density, high current capability and improved conduction performance.

The device has low voltage chaseway, power dissipation and much greater tolerance for both high and low temperature. The overall performance is improved with the advanced trench technology providing excellent RDS(on) and low gate charge.

The IPD50N06S4L08ATMA1 is a vertical power MOSFET transistor which is ideal for higher headroom and high power applications

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