IPD50R280CEAUMA1 Allicdata Electronics
Allicdata Part #:

IPD50R280CEAUMA1CT-ND

Manufacturer Part#:

IPD50R280CEAUMA1

Price: $ 1.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 550V 18.1A TO252
More Detail: N-Channel 550V 18.1A (Tc) 119W (Tc) Surface Mount ...
DataSheet: IPD50R280CEAUMA1 datasheetIPD50R280CEAUMA1 Datasheet/PDF
Quantity: 364
1 +: $ 1.29000
10 +: $ 1.25130
100 +: $ 1.22550
1000 +: $ 1.19970
10000 +: $ 1.16100
Stock 364Can Ship Immediately
$ 1.29
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 119W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Drain to Source Voltage (Vdss): 550V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT) 
Description

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The IPD50R280CEAUMA1 is a single N-Channel PowerTrench MOSFET developed by International Rectifier. This particular MOSFET is designed to provide a high level of performance and reliability in a range of voltage and current conditions. The IPD50R280CEAUMA1 has a maximum drain source voltage of 28V and a drain source current of 12A. In addition, its RDS(on) resistance (maximum) is 4.7 mΩ which is remarkably low.

This MOSFET is suitable for consumer electronics, automotive and industrial applications. While its use is wide ranging, the IPD50R280CEAUMA1 is well suited for use in DC/DC converters, load switches, bridge circuits, and as switches from low to high impedance. It has excellent switching characteristics and is compatible with many circuit types and technologies.

The IPD50R280CEAUMA1 is a power MOSFET and its working principle involves the control of a voltage or current on a given gate. When submitted to a positive voltage, the circuit is activated and current flows between the source and the drain. Upon an increase in the gate voltage, the current increases further with a limited increase in gate voltage. On the other hand, when the gate voltage is decreased, the current flow decreases, up to the point of no current flow at low gate voltage.

The IPD50R280CEAUMA1 also has a drain–source breakdown voltage (BVDSS) of 28V and a Gate-source threshold voltage (VGS(th)) of 1.65V. It has a maximum drain current (ID) of 12A. In addition, the Junction to Ambient thermal resistance is 177°C/W.

This MOSFET is capable of delivering high switching speeds, low RDS(on), low parasitic capacitances and a low input capacitance. It is highly efficient and offers a wide range of configurations. Some of the features of this MOSFET are: a fast switching frequency, a low on-state resistance, a high drain-source breakdown voltage and an excellent temperature stability.

In conclusion, the IPD50R280CEAUMA1 is a robust and reliable single N-Channel MOSFET device. It has a low maximum drain-source on-state resistance and can handle up to 12A of current. It is suitable for a wide range of applications such as consumer electronics, automotive and industrial, DC/DC converters, load switches, bridge circuits, and as switches from low to high impedance. The IPD50R280CEAUMA1 has a voltage ratings of 28V, a drain-source breakdown voltage of 28V and a gate source threshold voltage of 1.65V. It also has a maximum junction to ambient thermal resistance of 177°C/W.

The specific data is subject to PDF, and the above content is for reference

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