
Allicdata Part #: | IPD50P04P4L11ATMA1TR-ND |
Manufacturer Part#: |
IPD50P04P4L11ATMA1 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 40V 50A TO252-3 |
More Detail: | P-Channel 40V 50A (Tc) 58W (Tc) Surface Mount PG-T... |
DataSheet: | ![]() |
Quantity: | 15000 |
1 +: | $ 0.32000 |
10 +: | $ 0.31040 |
100 +: | $ 0.30400 |
1000 +: | $ 0.29760 |
10000 +: | $ 0.28800 |
Vgs(th) (Max) @ Id: | 2.2V @ 85µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3-313 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 58W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 10.6 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD50P04P4L11ATMA1 is a high voltage MOSFET (HVFET) that is widely used in a variety of applications for power switching, voltage regulation, and signal amplification. It is designed to operate in the range of -45V to 85V, allowing it to handle high voltage applications. This device is especially popular when a rugged device is desired, as the HVFET is immune to electrostatic discharge (ESD) and other high-frequency noise.
The IPD50P04P4L11ATMA1 is a Power MOSFET, which is an integrated type of field effect transistor (MOSFET) designed for power control. A MOSFET is a type of field-effect transistor (FET) that uses metal-oxide-semiconductor technology to provide faster operation and higher forward-current capacity than a traditional e-Field device can. It is composed of a gate, drain, and source electrodes to control the amount of current that can flow through it.
The IPD50P04P4L11ATMA1’s working principle is based on the gate effect. The gate of the MOSFET works like a switch: when it is low or high enough, it allows current to flow through the source and drain, but when it is in an intermediate state, the current does not flow. This is because, when there is no voltage applied to the gate, the semiconductor material between the source and the drain consists of a resistive material which prevents current from flowing. But if a certain voltage is applied to the gate, the semiconductor material between the source and the drain changes to a conductor, allowing current to flow.
The IPD50P04P4L11ATMA1 is best suited for applications that require high voltage, usually at frequencies of up to 10MHz. It finds its applications in a variety of power switching and voltage regulation applications including motor control, motor inverters, motor drives, HVAC systems, and in the automotive and consumer electronics industries. It is also used in solar inverters, industrial power supplies, medical and consumer electronics, such as hand-held devices and portable equipment.
Overall, the IPD50P04P4L11ATMA1 is a rugged and reliable high voltage MOSFET device with an operational range of -45V to 85V. It is used in a variety of applications, including motor control, motor inverters, motor drives, HVAC systems, and in the automotive and consumer electronics industries. It is immune to electrostatic discharge (ESD) and other high frequency noise, making it a great choice for applications that require reliable and high current power switching and voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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