Vgs(th) (Max) @ Id:	2V @ 85µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	58W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3770pF @ 25V
Vgs (Max):	+5V, -16V
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	10.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPD50P03P4L11ATMA1 Application Field and Working Principle

Introduction

The IPD50P03P4L11ATMA1 is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Infineon. It is part of the IPD series of power switching products, boasting a low on-state resistance, low gate charge and fast switching capabilities. The IPD50P03P4L11ATMA1 has been designed to facilitate efficient heat dissipation, provide a long product lifetime and ensure suitability for a wide variety of applications and functions.

Features & Specifications

The IPD50P03P4L11ATMA1 features a drain to source voltage of 50V, gate to source voltage of +/- 20V and a continuous drain current of 30A. It has an R_ds(on) of 4.7 mOhms at 25°C and an R_ds(on) of 5.2 mOhms at 175°C. The maximum drain current is 60A with a single pulse at a temperature of 25°C. It features a max. power dissipation of 264 watts when mounted on a 50x50x6mm 2oz. copper area and a maximum junction temperature of 175°C.

Applications

The IPD50P03P4L11ATMA1 offers a high degree of versatility and can be applied for a wide range of installations and functions. These applications include; serving as a power switching device in lighting ballasts, televisions, HVAC systems, and motor drives; as well as being employed as a power switch on industrial robots, laser printers, and photocopiers. The IPD50P03P4L11ATMA1 can also be used in automotive control systems, solenoid drivers, and PFC (power factor correction) circuits.

Working Principle

The IPD50P03P4L11ATMA1 is based on the concept of an ‘enhancement mode’ MOSFET, which is a type of field-effect transistor. It is a type of voltage-controlled, unipolar semiconductor, meaning it is composed of a single-charge carrying component that is free to move through a semiconductor. When a positive gate voltage is applied to the anode and cathode terminals, the field effect caused by the electric field causes ‘inversion’ of the connecting semiconductor material. In other words, the electric charge is reversed, allowing current (an electron flow), to flow through the device. When the gate voltage is removed, the inversion is removed and the MOSFET shut off. The IPD50P03P4L11ATMA1 features a ‘double trench’ structure, allowing for a reduced gate charge and a faster switching time compared to other MOSFET transistors. This makes it an ideal choice in fast switching applications when speed and power efficiency are important. It is also equipped with an internal temperature protection feature, making it suitable for applications where temperature control is a critical aspect.

Conclusion

The IPD50P03P4L11ATMA1 is an N-channel enhancement mode MOSFET manufactured by Infineon. It is suited to applications where speed and power efficiency are important, such as lighting ballasts, motor drives and PFC circuits. The IPD50P03P4L11ATMA1 boasts low on-state resistance, low gate charge and fast switching capabilities, allowing for a highly efficient power switching device. Additionally, it has an internal temperature protection feature, making it suitable for applications that require temperature control.

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