IPD50R520CPATMA1 Allicdata Electronics
Allicdata Part #:

IPD50R520CPATMA1-ND

Manufacturer Part#:

IPD50R520CPATMA1

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: LOW POWER_LEGACY
More Detail:
DataSheet: IPD50R520CPATMA1 datasheetIPD50R520CPATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.55000
10 +: $ 0.53350
100 +: $ 0.52250
1000 +: $ 0.51150
10000 +: $ 0.49500
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Series: *
Part Status: Active
Description

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The IPD50R520CPATMA1 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is commonly used in switching and power management applications. Its main function is to regulate the flow of electrical current from the source to the load. It is an important component of electronic circuits and plays various roles depending on its type and purpose.

The IPD50R520CPATMA1 is an N-channel MOSFET which is capable of handling a maximum continuous drain current of 26A and up to a maximum drain source voltage of 55V. It is equipped with a very low loss level of 0.028R allowing for power efficiency. It also has a very low on-state resistance of 0.039 ohms, meaning it can switch extremely fast. This makes it suitable for high-speed switching applications.

The IPD50R520CPATMA1 is most commonly used in power supply designs, voltage regulators, motor speed controllers, and other DC-to-DC conversion applications. It is also often used as a relay switch, since it is able to handle large amounts of current. Its low on-state resistance makes it suitable for applications requiring fast switching speeds and high power efficiency.

The working principle of the IPD50R520CPATMA1 is based on the field-effect principle. In this type of transistor, a voltage applied to the gate (G) controls the flow of current from the drain (D) to the source (S). When the gate voltage is raised, the channel between the drain and source is opened and a current starts to flow between them. When the voltage is reduced, the channel closes and the current is reduced.

The IPD50R520CPATMA1 has a variety of useful properties, which make it ideal for a wide range of applications. Its low on-state resistance allow for fast switching and high power efficiency. It is also able to handle a large amount of current and has a low drain-source RDSon, which helps to ensure low power consumption. Its field-effect principle also makes it ideal for applications where precise control of current is required.

In conclusion, the IPD50R520CPATMA1 is a single N-channel MOSFET which is well-suited to a variety of applications, such as power supply designs, voltage regulators, motor speed controllers, and other DC-to-DC conversion systems. It has a low on-state resistance, allowing for fast switching and high power efficiency. It is also able to handle a large amount of current and has a low drain-source RDSon which helps to ensure low power consumption. The field-effect principle also makes it ideal for applications where precise control of current is required.

The specific data is subject to PDF, and the above content is for reference

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