IPD50R399CPATMA1

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The IPD50R399CPATMA1 is a double-diffused self-aligned enhancement-mode power MOSFET that is designed to provide high power density with excellent efficiency and low gate charge for applications such as switch-mode power supplies, lighting, motor control, and audio. It utilizes a novel low voltage process and thin-film technology to minimize conduction and gate losses. The IPD50R399CPATMA1 is a unique device offering high efficiency and extreme power density, making it an ideal choice for these kinds of applications.

Application Fields

The IPD50R399CPATMA1 is an enhancement-mode power MOSFET that is widely used in applications such as switch-mode power supplies, lighting, motor control, and audio. It is capable of providing high power density with excellent efficiency and low gate charge, making it a great choice for these kinds of applications.

The IPD50R399CPATMA1 is ideal for the control of high power loads, such as those found in motor control applications, as it features a very low on-resistance with a peak current rating of 4.5A. Its high power rating and extremely low RDS(on) makes it an excellent choice for switch-mode power supplies and lighting applications.

Furthermore, due to its low capacitance, the IPD50R399CPATMA1 can be used to produce high quality audio systems, as it can provide very low distortion levels, even at high signal frequencies.

Working Principle

The IPD50R399CPATMA1 is an enhancement-mode MOSFET and operates on the principle of "injection of majority carriers". That is, when the gate voltage (Vgs) is increased, holes from the P-channel region migrate across the depletion layer, forming a conduction path between the source (S) and the drain (D) for the flow of majority carriers (holes).

The MOSFET also features a body diode, which is formed between the source and drain regions, allowing current to flow in either direction. This diode becomes active when the gate voltage is reversed, and is used to protect the MOSFET from harmful transient voltages.

The IPD50R399CPATMA1 also features a unique self-aligning process. The self-aligning process offsets the gate connection away from the drain region, allowing the MOSFET to be operated at higher frequencies, with greater control.

The IPD50R399CPATMA1 utilizes a novel low voltage process and thin-film technology to minimize conduction and gate losses. This allows the device to efficiently switch on and off at high speeds, making it ideal for applications such as motor control and audio.

Advantages

• High efficiency with an extremely low RDS(on)
• High power density
• Low gate threshold voltage
• Low capacitance for high frequency applications
• Low on-resistance with peak current rating of 4.5A
• Self-aligning process
• Low voltage process and thin-film technology to reduce conduction and gate losses

The IPD50R399CPATMA1 is an ideal choice for applications such as switch-mode power supplies, lighting, motor control, and audio. Its high power density, high efficiency, low gate threshold voltage, and low capacitance make it an excellent choice for these kinds of applications. The IPD50R399CPATMA1 utilizes a unique self-aligning process and low voltage process, allowing it to be efficiently switched on and off at high speeds, making it ideal for high power loads, as well as audio applications.

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