IPD50R800CEAUMA1

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IPD50R800CEAUMA1 Application Field and Working Principle

The IPD50R800CEAUMA1 is a premium quality insulated gate bipolar transistor (IGBT) from STMicroelectronics. It is a high-performance and high-current device, designed for use in drives, motor controls, power supplies, and other systems requiring high power switching. This device combines the advantages of MOSFETs and Bipolar junction transistors with high voltage and low on-resistance features for superior switching performance. The IPD50R800CEAUMA1 is part of the IPD family of IGBTs. It has excellent gate drive capabilities, low RDS(on) and includes a built-in anti-parallel diode.

An insulated gate bipolar transistor (IGBT) is a type of power switching device, which combines the best features of both bipolar junction transistors (BJTs) and Metal Oxide Field Effect Transistors (MOSFETs). IGBTs have a gate-controlled structure and hence, allow for easier switching characteristics compared to BJTs, which are current-controlled devices. IGBTs are voltage-controlled devices, which have the ability to experience very low on-state resistance in contrast to MOSFETs, while they can also offer higher power dissipation than BJTs. The IPD50R800CEAUMA1 is a N-channel IGBT transistor, which provides guaranteed specifications at both low and higher connector voltages and temperatures.

IGBT Working Principle

An IGBT operates like a switching device - when the gate voltage is below the threshold voltage, the IGD structure is in the blocking state and no current is flowing through it. When the gate voltage exceeds the threshold voltage, the MGD structure will turn on, allowing for current to flow between the collector and the emitter terminals. The voltage between the collector and the emitter is referred to as the V CE-sat. This occurs because the positive gate voltage has created a positive charge on the N-type body and the electrons in the N-type body are drawn towards the positive gate, forming an N-type channel.

When the positive gate voltage is removed from the IGBT, the electrons return to the N-type body and cause the current to cease flowing between the collector and the emitter. At this point, the IGBT is back to its blocking state and the resistance between the collector and emitter is large enough to block further current flow. Therefore, by changing the gate voltage, it is possible to control the IGBT to effectively switch current between the collector and the emitter.

Application Field

The IPD50R800CEAUMA1 is capable of providing high current capabilities and robust switching performance, which makes it ideal for a wide range of applications. It can be used in switching power supplies, motor drive applications, power converters, inverters, and other applications that require high current switching. It is suitable for use in high power AC and DC switch mode power supplies, as well as in solar inverters and battery charging systems.

The IPD50R800CEAUMA1 is also highly suitable for applications that require fast switching, such as in high frequency power converters, DC-DC converters, and Class D audio amplifiers. Its low on-state resistance and excellent gate drive capabilities make it a preferred choice for these types of applications. It is also ideal for applications that require switching in both directions, such as in motor control and drive applications.

In conclusion, the IPD50R800CEAUMA1 is an excellent device for high power and high frequency switching applications. Its low on-state resistance, robust switching performance, and ease of use make it a preferred choice for many applications. This device combines the advantages of MOSFETs and Bipolar junction transistors with high voltage and low on-resistance features for superior switching performance.

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