IPD60R385CPBTMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IPD60R385CPBTMA1TR-ND |
Manufacturer Part#: |
IPD60R385CPBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 9A TO-252 |
More Detail: | N-Channel 650V 9A (Tc) 83W (Tc) Surface Mount PG-T... |
DataSheet: | IPD60R385CPBTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 340µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 385 mOhm @ 5.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IPD60R385CPBTMA1 has applications in numerous industrial, automotive, and communications markets. As a high-performance and low-cost field-effect transistor, it is widely used in power management, load switching, and over-current protection. The IPD60R385CPBTMA1 is a single N-channel TrenchFET Power MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). The device features Adaptive Body Bias technology for higher efficiency, lower RDS(on)s, and improved body diode performances. It is also Optimized for low-resistance and low-capacitance.
The IPD60R385CPBTMA1 is an N-channel enhancement-mode power metal oxide semiconductor field effect transistor which utilizes specially designed cell structures to provide low RDSon and high gain performance. It is packaged in a 3mm x 3mm QFN package and is available in a broad range of gate voltages. It operates at up to 30V and offers a wide range of output current capabilities, up to 155A.
The working principle of the IPD60R385CPBTMA1 is based on the Gate–Source voltage which controls the current flow between the Source and the Drain electrodes. This voltage is applied to the Gate terminal that controls the switch by triggering a depletion zone in the channel region of the MOSFET. As the Gate- source voltage (Vgs) is increased, the depletion zone spreads further, resulting in an increase in the current passing through the MOSFET. This action permits the efficient control of large currents passing through the device.
In addition, the IPD60R385CPBTMA1 employs Adaptive Body Bias technology which allows the device to automatically adjust its body bias to optimize its performance in either low-side or high-side switch applications. With this technology, the device experiences a continuous power reduction while the voltage across the device remains the same. This technology reduces device losses, resulting in better efficiency and better performance.
Furthermore, the IPD60R385CPBTMA1 is capable of operating up to 30V and supports a wide range of output current capabilities, up to 155A. It also features low capacitance and low on-state resistance, making it an ideal choice for high-performance applications. The device also offers very fast switching times, enabling it to be used in switching applications where speed is of the essence.
In conclusion, IPD60R385CPBTMA1 is an excellent choice for a variety of industrial, automotive, and communications applications. The device features wide gate voltage range and low on-state resistance, enabling it to provide improved efficiency and performance. Its Adaptive Body Bias technology also improves the device\'s overall performance in either high-side or low-side applications. Furthermore, the device is capable of operating up to 30V and can support a wide range of output current capabilities, up to 155A, making it an ideal choice for high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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