IPD60R450E6BTMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPD60R450E6BTMA1 is a high dV/dt rated 600V, first-generation trench Field Stop IGBT device, with single-side cooling. It has soft switching with great dV/dt tolerance, high-speed operation, and robustness. It also has low conduction losses and anti-parallel dual-diode integrated.

The IPD60R450E6BTMA1 belongs to the category of Transistors - FETs, MOSFETs - Single. It is designed for high-current, low-frequency switching applications in motor drives, automotive powertrain, industrial motor controllers, and converters. The typical application fields are, but are not limited to, DC-DC converters and PFC (power factor correction) in AC-DC converters.

This IGBT has four main parts, namely the gate drive, the IGBT cell, the NTC thermistor, and the gate drive circuit. The gate drive circuit provides the necessary drive for the IGBT cell, enabling it to conduct and prevent it from exceeding its reverse voltage rating. The NTC thermistor ensures that the temperature of the IGBT cell is kept within its safe operating range.

The working principle of IPD60R450E6BTMA1 is based on conventional charge-based MOSFET principles. The IGBT is conducting a current from its drain to its source when its gate and the source voltage is positive. The threshold voltage (VTH) on the gate of this IGBT must first be exceeded before any significant current will flow. Then, once the gate reaches a certain drive current level and the drain-to-source voltage (VDS) decreases below the IGBTs rated VDS, the transistor operates in its linear region and is conducting otherwise it is off. In order to turn off the transistor, the gate must be discharged below the threshold voltage.

To optimize the IGBTs switching performance, the gate drive voltage should be approximately equal to the IGBT\'s VTH before switching on the device. With this, the current is limited to the safe load limit when the device turns on. When the device is turned off, it is important that the voltage is at least 4V above VTH before the IGBT is turning off. Also, the time for switching off should not exceed the time limit specified for the IGBT, otherwise serious over-voltage problems may arise.

These measures help protect the IGBT from potentially damaging over-voltage and over-heating. In addition, proper protection techniques such as voltage clamping and a protective drive circuit should be used to further protect the device from transient voltages that may occur due to the sudden turn off.

The IPD60R450E6BTMA1 is a very useful device for applications requiring high-current, low-frequency switching. It is also capable of withstanding high dV/dt values, making it suitable for higher frequency applications. Moreover, this IGBT is protected from over-voltage and over-heating with its reverse-biased parasitic diode, thermistor, and its overvoltage protection circuit.

The specific data is subject to PDF, and the above content is for reference