IPD60R3K3C6ATMA1 Allicdata Electronics
Allicdata Part #:

IPD60R3K3C6ATMA1TR-ND

Manufacturer Part#:

IPD60R3K3C6ATMA1

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 1.7A TO252-3
More Detail: N-Channel 600V 1.7A (Tc) 18.1W (Tc) Surface Mount ...
DataSheet: IPD60R3K3C6ATMA1 datasheetIPD60R3K3C6ATMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.17775
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 18.1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
Series: CoolMOS™ C6
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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.

The integrated power device IPD60R3K3C6ATMA1 is a single N-channel MOSFET optimized for high-speed switching applications.

Application Field

IPD60R3K3C6ATMA1 is mainly used in automotive applications and consumer electronics, such as DC/DC converters, motor control, load switches and real-time switching. It has a variety of applications in automotive systems such as driver power windows, starter motors, lighting controls, alternators, power roofs, and power seats.

Moreover, it is a relevant switch for power supplies and battery charging, as well as portable electronics, mobile phones, and tablet PCs. It also has wide applications in consumer electronics such as LCD / LED displays, digital cameras, video cassette recorders (VCRs), audio / video amplifiers, home appliances, DVD players, and recorders.

Working Principle

IPD60R3K3C6ATMA1 is a depletion-mode enhancement n-channel MOSFET. It uses a compound semiconductor layer structure which consists of an insulated gate and a semiconductor (the substrate) in order to control the width of the resistor silicon W germanium.

Once the power source is able to supply a larger voltage than the threshold voltage, the current flows through the device at a low impedance. When the power source is reducing its amount or going below the threshold voltage, the device behaves similarly to an open switch.

It is a fully-depletion mode device and operates in the inverted condition. This means that when the drain-source voltage (Vd) is applied, the device provides low on- impedance and when Vd is removed it behaves as an open switch. It has good dynamic impedance characteristics while still having low power consumption.

IPD60R3K3C6ATMA1 can also operate in a standard mode and has no latch-up in either operating mode. It has an excellent frequency response with a high switching speed and low gate charge, which makes it ideal for automotive power switch applications.

In the application of power MOSFETs, this device has an excellent cost-effectiveness ratio and offers an ideal solution for power applications.

The specific data is subject to PDF, and the above content is for reference

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