IRF1405ZLPBF Allicdata Electronics
Allicdata Part #:

IRF1405ZLPBF-ND

Manufacturer Part#:

IRF1405ZLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A TO-262
More Detail: N-Channel 55V 75A (Tc) 230W (Tc) Through Hole TO-2...
DataSheet: IRF1405ZLPBF datasheetIRF1405ZLPBF Datasheet/PDF
Quantity: 1648
Stock 1648Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF1405ZLPBF, a single power FET from Infineon, is widely used in power management applications. It is a logic level enhancement mode MOSFET, which allows operation from 2.5V supply until 15V supply. It is suitable for very low gate drive and for high speed switching applications.

IRF1405ZLPBF transistors are used in a variety of electronic circuits. It is commonly used in power management and switching applications such as DC-DC converters, switching regulators, motor control circuits, audio amplifiers, inverters, and other power management applications.

The IRF1405ZLPBF offers lower on-resistance, low gate-to-source and gate-to-drain charge, and fast switching capabilities. It is particularly suitable for very low gate drive and high speed switching applications due to its low gate capacitance and low charge characteristics.

The device is designed to handle high voltage and high current loads, making it ideal for applications where power handling capability is important. It is also suitable for use in pulsed power applications.

The working principle of the IRF1405ZLPBF is that it uses an enhancement-mode MOSFET structure, in which an enhancement layer between the source and drain electrodes creates an electric field that pushes away electrons from the source and pulls electrons to the drain when driven by a positive gate voltage. This action allows current to flow between the source and drain when a voltage is applied across the gate and source, making the transistor act as a switch. When the gate voltage is zero or negative, the electric field is reduced or eliminated, and no current flows between the source and drain, thus turning off the transistor.

The basic operation of an IRF1405ZLPBF is the same as any other enhancement-mode MOSFET, but its size and design allow it to have much lower on-resistance and better performance over a certain operating temperature range. The main advantage of this device is its low gate charge, which allows it to operate faster than other types of FETs.

In summary, the IRF1405ZLPBF is a single power FET from Infineon, mainly used in power management and switching applications. It is suitable for very low gate drive and for high speed switching applications due to its low capacitance and low charge characteristics. It has lower on-resistance and better performance over a certain operating temperature range, and its use allows for the handling of higher current and Voltages. It works by using an enhancement-mode MOSFET structure that creates an electric field which pushes away electrons at the source and pulls them to the drain with a Gate voltage.

It is a useful device for many applications, and its size and characteristics make it an ideal choice for those applications that require a low gate charge, high current handling and fast switching capability.

The specific data is subject to PDF, and the above content is for reference

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