IRF1503STRRPBF Allicdata Electronics
Allicdata Part #:

IRF1503STRRPBF-ND

Manufacturer Part#:

IRF1503STRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 75A D2PAK
More Detail: N-Channel 30V 75A (Tc) 200W (Tc) Surface Mount D2P...
DataSheet: IRF1503STRRPBF datasheetIRF1503STRRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 140A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF1503STRRPBF is a series of MOSFETs produced by International Rectifier. It is a single N-channel enhancement type MOSFET with a drain-source voltage rating of 30V, a drain-gate voltage of 30V, and a maximum drain current of 14A.

The device has a robust construction and low on-resistance properties, which makes it suitable for a wide range of applications in modern electronic circuits. It is typically used as a switch in power supply circuits, DC-DC converters, motor control applications, and as a dynamic switch in logic and switching circuits.

The working principle of the IRF1503STRRPBF is based on the same principle as other MOSFETs. It consists of a semiconductor material with a source region and a drain region, separated by a gate region. The gate region is separated from the source and drain regions by an electric field. When a small voltage is applied to the gate, an electric field is created, which affects the conductive characteristics of the device. This allows the device to act as a switch, controlling the current flowing between the source and the drain.

The performance of the IRF1503STRRPBF is highly dependent on the gate voltage and current. In order to ensure optimal performance, it is important to use the correct application circuitry in order to control the gate voltage and current. The device is also sensitive to temperature, and extreme temperatures can cause permanent damage.

The IRF1503STRRPBF can be used in a wide range of applications, from consumer electronics to automotive and medical equipment. It is a robust device, and its low on-resistance properties make it ideal for high power applications. Furthermore, its small size makes it suitable for use in compact electronic systems.

In summary, the IRF1503STRRPBF is a single N-channel MOSFET with a drain-source voltage rating of 30V, a drain-gate voltage of 30V, and a maximum drain current of 14A. It is suitable for a range of applications, especially those that require a high power rating and a small size. Its robust construction and low on-resistance properties make it highly effective and reliable.

The specific data is subject to PDF, and the above content is for reference

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