IRF1405ZL-7PPBF Allicdata Electronics
Allicdata Part #:

IRF1405ZL-7PPBF-ND

Manufacturer Part#:

IRF1405ZL-7PPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 150A TO263CA-7
More Detail: N-Channel 55V 120A (Tc) 230W (Tc) Through Hole TO-...
DataSheet: IRF1405ZL-7PPBF datasheetIRF1405ZL-7PPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-263-7 (Straight Leads)
Supplier Device Package: TO-263CA-7
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF1405ZL-7PPBF is a type of MOSFET with N-channel and Level 7 performance. Developed by International Rectifier, it is designed to handle high voltage and allows for high input impedance and low current draw. This MOSFET is common in power supplies, as it has characteristics that make it suitable for switching high current in a power supply system.

The IRF1405ZL-7PPBF is a single FET, meaning there is only one MOSFET in a single package. It has a single gate, one source and one drain, which is known as a source-drain configuration. This type of MOSFET, unlike others, has a gate-drain configuration that gives the gate access to both the source and the drain. This means that the device can control the charge carrier mobility between both electrodes, allowing for the switching of high voltages.

Another key characteristic of the IRF1405ZL-7PPBF is its low gate-source capacitance, which helps reduce switching losses. This also increases its immunity to noise, making it suitable for use in high-frequency applications. The device also has a very high blocking voltage, which helps to keep the device from failing during high-voltage applications. Additionally, the high blocking voltage also helps to prevent overvoltage conditions that might cause the device to fail.

The IRF1405ZL-7PPBF device is often used in power supply systems, where it can be used to turn on and off devices. This is because it has a very low on-state resistance, which helps to reduce power losses while providing good power-switching performance. Additionally, the device is also used in motor control applications, as it is able to deliver high peak current with fast switching times.

The IRF1405ZL-7PPBF works by using an applied electric field in the gate-channel region of the MOSFET. When a voltage is applied to the gate, it changes the electric field in the gate-channel region, resulting in the application of electrical force to the channel. This force attracts charge carriers, which causes a current flow to occur. By manipulating the voltage applied to the gate, the current flow in the channel can be controlled, allowing the MOSFET to be used as a switch.

In conclusion, the IRF1405ZL-7PPBF is an important MOSFET used in a variety of different applications. Its high blocking voltage and low gate-source capacitance help to ensure reliable operation in high-voltage applications. Additionally, its low on-state resistance and fast switching times make it an ideal choice for power control applications. Finally, its gate-drain configuration makes it suitable for use in motor control applications.

The specific data is subject to PDF, and the above content is for reference

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