IRF530A Allicdata Electronics
Allicdata Part #:

IRF530A-ND

Manufacturer Part#:

IRF530A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 14A TO-220
More Detail: N-Channel 100V 14A (Tc) 55W (Tc) Through Hole TO-2...
DataSheet: IRF530A datasheetIRF530A Datasheet/PDF
Quantity: 385
Stock 385Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Vgs (Max): --
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 110 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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IRF530A is an N-channel MOSFET device known as an Enhancement-mode Power MOSFETs, which is an advanced type of MOSFET and is more efficient than depletion-mode devices. IRF530A is an ideal choice for applications that require a low gate-threshold voltage, low On-resistance, high power capability, and high frequency switching.

IRF530A has a wide range of possible applications due to its characteristics. It can be used as an amplifier, a power divider, an inverter, a transformer, a regulator, a solenoid driver, a motor driver, a heater control, and a pulse control. It can also be used as a dimmer switch, as a voltage regulator, for power levels up to 2.5A, and for logic level convergence.

The main working principle of IRF530A is based on a phenomenon called “Punch Through”. Punch Through effect is a feature of most MOSFETs, where as the voltage on the gate terminal reaches the threshold voltage, the P-region penetrates into the N-region making a transconductor, thus allowing the electrons to move from the drain to the source. This allows the current to flow through the MOSFET.

IRF530A also has a self-regulating property known as "channel-length modulation" (CLM). When the voltage, current, and temperature of the device increase, the power rating of the device also increases, thus making it suitable for applications in which wide range and high power capability are desired. This also makes it suitable for power transmission applications where short-circuit protection is required.

The switching performance of IRF530A is also very good. It can switch between high and low states very quickly and settle into a low saturation voltage when the gate voltage is applied. This makes it suitable for a wide range of power switch applications, such as in DC-DC converters, load switches, power supplies, and DC motor drives.

In conclusion, IRF530A is a widely used N-channel MOSFET with a wide range of possible applications. Its low gate-threshold voltage, low On-resistance, high power capability, and high frequency switching make it ideal for various applications such as amplifiers, power converters, and motor drives. Its self-regulating property and good switching performance make it suitable for power switching and transmission applications in which short-circuit protection is required.

The specific data is subject to PDF, and the above content is for reference

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