Allicdata Part #: | IRF740LCSTRL-ND |
Manufacturer Part#: |
IRF740LCSTRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 10A D2PAK |
More Detail: | N-Channel 400V 10A (Tc) Surface Mount D2PAK |
DataSheet: | IRF740LCSTRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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1. Introduction
The IRF740LCSTRL is a Low Capacitance Low On Resistance N-Channel Enhancement-Mode Field-Effect Transistor (FET) from Infineon. It shares the same characteristics as the popular IRF740 FET, but reduces the capacitance from a typical 25pF to 17pF. This reduction in capacitance increases the switching speed and further improves the performance of the device.
2. Application Field
The IRF740LCSTRL is an ideal Power MOSFET for applications requiring high frequency, high power, low RDS(ON) and low capacitance. It is suitable for use in many applications, including solar inverters, DC/DC converters and other power management, switching and power supply circuits. This device is also widely used in high voltage and high current applications such as motor control, high power audio amplifiers, solenoid and relay applications.
3. Working principle
The IRF740LCSTRL is an Enhancement-Mode FET, meaning it normally has a very high impedance until a voltage potential is applied across the Gate and Source connections. When the Gate to Source voltage exceeds the device’s threshold voltage, current flows between the Drain and Source. This in turn causes the Drain voltage to rise, and the device turns on. At this point, a conducting path is established between the Drain and Source and current begins to flow.
When the Gate to Source voltage is removed, the device turns off and blocks any current from flowing between the Drain and Source connections. This is known as the OFF state and the FET acts as a switch, with very low power consumption. The device is always in control of the current flow, depending on the voltage potential on the Gate. This allows the IRF740LCSTRL to be used in switching and smart power management applications.
4. Summary
The IRF740LCSTRL is an ideal solution for applications requiring high frequency, high power, low RDS(ON) and low capacitance. This device is a Low Capacitance Low On Resistance N-Channel Enhancement-Mode FET from Infineon, and is suitable for many applications such as solar inverters, DC/DC converters, motor control and high power audio amplifiers. When a voltage potential is applied across the Gate and Source connections, current is allowed to flow between the Drain and Source. When this voltage is removed, the device blocks any current flow and acts as a switch.
The specific data is subject to PDF, and the above content is for reference
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