Allicdata Part #: | IRF740STRRPBF-ND |
Manufacturer Part#: |
IRF740STRRPBF |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 10A D2PAK |
More Detail: | N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surfa... |
DataSheet: | IRF740STRRPBF Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.14357 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF740STRRPBF is a high power insulated-gate field-effect transistor (IGFET), otherwise known as a MOSFET, made for use in a variety of power control applications. Utilizing a single N-channel MOSFET, this device provides electrical isolation between the input and output signals, in addition to its power control capabilities. With a 40V drain-source voltage rating, the IRF740STRRPBF is capable of dissipating up to 22A of current on a continuous basis. It can also handle a maximum gate-source voltage (VGS) of 30V, and is rated for a total power dissipation of 93W. This device is packaged in a TO-252-3 Surface Mount Technology (SMT) package.
The IRF740STRRPBF is designed primarily as a power control device. It is commonly used in automotive applications such as controlling motors, solenoids, and other high-power equipment. Its robust design also makes it suitable for use in industrial environments, as it can withstand significant amounts of electrical noise and power spikes. Due to its insulated-gate feature, the IRF740STRRPBF is also suitable for use in noise-sensitive audio applications, as it can prevent electrical signals from leaking into the device’s through-hole mount. Additionally, the device’s low on-resistance along with its high frequency operation allows for efficient power distribution.
The working principle of the IRF740STRRPBF is fairly straightforward. When a positive voltage is applied to the gate of the device, it creates an electric field in the channel between the source and the drain. This electric field results in a reduction in channel resistance. This in turn causes a current to flow from the source to the drain. When the voltage applied to the gate drops, the electric field collapses and the resistance between the source and the drain rises again, stopping current flow.
The IRF740STRRPBF is an incredibly versatile device and can be used in a wide range of applications. Its robust features allow it to withstand significant levels of electrical noise and power spikes which makes it perfect for use in noisy and harsh environments such as automotive and industrial applications. Its insulated-gate feature also makes it suitable for audio noise sensitive applications, as it can help to prevent any electrical signals from leaking through the device’s through-hole mount. Its low on-resistance and high frequency operation allow for efficient power distribution, making it an ideal choice for high-power control applications. Overall, the IRF740STRRPBF is an excellent choice for anyone looking for a reliable high-power control device.
The specific data is subject to PDF, and the above content is for reference
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