IRF7413ZPBF

Vgs(th) (Max) @ Id:	2.25V @ 25µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1210pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	10 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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.IRF7413ZPBF is an N-Channel enhancement-mode vertical DMOS Field Effect Transistor with an integral high power Schottky diode. It is designed for use in high current applications such as lighting, power management, and communications. This device provides low on-state resistance and high efficiency.The IRF7413ZPBF is ideally suited for use in DC–DC converters, resonant power supplies, and active clamp circuits. It provides a significant increase in system performance and efficiency when used in systems with limited space and resources.This device is ideally suited for use in applications such as switched-mode power supplies, DC–DC buck converters, and high-frequency DC–DC boost converters. It has a low on-resistance, a low gate charge and can operate with a wide range of input voltages. With its low threshold voltage, the device can be used in high-side and low-side switch circuits.The IRF7413ZPBF is constructed with an integrated vertical DMOSFET to reduce thermal resistance and reduce package size. The device also features a P-channel MOSFET integrated into the top of the package. This allows current to be transferred and switched between the P-channel and N-channel FETs without the need of additional external components.The IRF7413ZPBF combines two MOSFETs with an integral Schottky diode in a single package, enabling higher efficiency and less power loss than systems using discrete components. The integrated Schottky diode boosts efficiency by providing a reverse recovery path for current during switching operations.The IRF7413ZPBF has several working principles. It contains an N-Channel FET and P-Channel FET, both of which are operated in the enhancement mode. This means that the gate voltage must be applied above the threshold voltage for the drain current to be controlled. The voltage applied to the gate controls the current moving from the drain to the source.The P-Channel FET is activated by a negative voltage applied to the gate, while the N-Channel FET is activated by a positive voltage. When both the P-Channel FET and the N-Channel FET are both activated, the integrated Schottky diode is held in the off-state and the current is allowed to pass through the device.By controlling the gate voltage of the N-Channel FET and the P-Channel FET, the IRF7413ZPBF can be used as an adjustable voltage regulator or can be used to provide accurate current control in a high-efficiency system.The IRF7413ZPBF is a reliable and efficient device for use in applications where high current is needed and space or resources are limited. It provides high efficiency, low thermal resistance, low gate charge, and high-frequency performance. It can be used in a wide range of applications, from switched-mode power supplies to lighting, power management, and communications.

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