Allicdata Part #: | IRF7416PBF-ND |
Manufacturer Part#: |
IRF7416PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 10A 8-SOIC |
More Detail: | P-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | IRF7416PBF Datasheet/PDF |
Quantity: | 2422 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IrF7416PBF Field Effect Transistors (FETs) are a type of semiconductor acting as an electronic switch or voltage-controlled amplifier. They are named after their inventor, Dr. Jack Faraday, and have been around since the early 1950s. Since then, they have gone through numerous advances in technology, making them one of the most popular and common types of FETs today. The IrF7416PBF is a type of FET with relatively high performance and a low on-resistance, making them ideal for applications where power transistors are required. The IrF7416PBF is a single-channel FET (Field Effect Transistor) with a maximum operating voltage of 20V and a maximum operating current of 8A. It features a high in-amp linearity, a low input capacitance, and a low on resistance. It also features low gate charge and low gate to source capacitance for improved performance in high-frequency switching applications. The IrF7416PBF is available in an ultra-small package and has an exceptionally low profile, making it ideal for portable or handheld applications. The IrF7416PBF is built using a 14nm process with a gate length of 4.75µm and an active area of 6.9mm x 8mm. The drain source voltage rating is 20V and the gate to source voltage rating is 12V. The input capacitance is minimised to reduce switching losses and the output capacitance is very low. The power dissipation is rated at 3.7 W and the maximum drain current rating is 8A. The device is immune to latch-up and electrostatic discharge, making it suitable for use in many different applications.The IrF7416PBF has a wide range of application fields, such as power switching, bridges, DC-DC converters and RF power amplifiers. As the device has a relatively low input capacitance, it is well suited for use in high-frequency switching applications, such as high-speed signal processing and memory interface. The low on-resistance of the IrF7416PBF also makes it ideal as a switch for low voltage, high current load circuits.The IrF7416PBF works on a basic principle of electrical charge. A DC voltage is applied to the gate terminal to turn the device on and allow current to flow between the source and drain terminals. Once a certain voltage is applied, the current flow is controlled, allowing for precise regulation of the current. As the drain-source resistance is low, the current flowing is also low, resulting in a low power dissipation. The IrF7416PBF is a highly advanced transistor with exceptional performance. Its low on-resistance and high current rating make it ideal for high-frequency switching applications where precise current regulation is of utmost importance. Its small size and low profile, combined with its immunity to electrostatic discharge and latch-up, make it ideal for use in portable and handheld devices. With its wide range of application fields, the IrF7416PBF is a must for any electronic device requiring precise current regulation.
The specific data is subject to PDF, and the above content is for reference
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