Allicdata Part #: | IRF7416TRPBFTR-ND |
Manufacturer Part#: |
IRF7416TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 10A 8-SOIC |
More Detail: | P-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | IRF7416TRPBF Datasheet/PDF |
Quantity: | 8000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF7416TRPBF Application Field and Working Principle
IRF7416TRPBF is a field effect transistor (FET) produced by International Rectifier, a company which specializes in developing power semiconductors. It is a single, high voltage, P-channel, MOSFET standing for a power metal-oxide-semiconductor field-effect transistor. Compared to traditional transistors, FETs provide higher performance, offer a larger power handling capacity, and show excellent electrical insulation properties. As such, the IRF7416TRPBF is frequently used for high-voltage (up to 100 V) and low-frequency applications, as well as in switching circuits, signal processing operations, and power conversion systems.
Design
The IRF7416TRPBF has a fairly simple design. It consists of the main structure—the floating body—which is an insulated-gate dielectric over a lightly doped semiconductor substrate. This design idea dates back to the 1960s and many current FETs use similar structures. When they operate, they predominantly do so through the application of electric fields as opposed to the heat-based temperature gradients used in bipolar transistors.
Working Principle
The IRF7416TRPBF utilizes a classic insulated-gate structure whereby a voltage applied to the terminal (source) will create a current from the source to the drain via the conducting channel created between source and drain. Additionally, the FET has a bipolar structure—each terminal is made up of two different conducting regions: one with a majority of electrons, the source; and one with a majority of holes, the drain. When a voltage is applied between the source and drain, it causes the electrons to move from the source to the drain and the holes to move from the drain to the source, respectively. This in turn produces a channel of electrons and holes, allowing current to flow between the two terminals.
Applications
The high voltage and low frequency capacity of the IRF7416TRPBF makes it an ideal choice for a wide range of applications, including motor control, lighting, LED and OLED displays, amplifiers, modulators, and data converters. Additionally, its P-channel design means it is often used in high performance, high frequency, and high power circuits such as RF amplifiers, audio amplifiers, and power management applications. Furthermore, since it performs better than other FETs, it is often used in automotive, medical, and aerospace applications where high performance and reliable operation are essential.
Conclusion
The IRF7416TRPBF is a single, high voltage, and P-channel MOSFET perfect for a variety of different applications, from RF amplifiers and audio amplifiers to medical, aviation, and automotive technology. While it has a relatively simple structure, it is incredibly efficient at producing current from a voltage and has many advantages over other FETs and traditional transistors, such as high performance, power handling capacity, and excellent insulation properties.
The specific data is subject to PDF, and the above content is for reference
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