IRF7460PBF

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2050pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	10 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRF7460PBF is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Fairchild Semiconductor Corporation. It is commonly used to control power in a variety of commercial, industrial and consumer applications. This device is used to switch large loads, regulate high current, and provide the necessary logic to power circuits.The IRF7460PBF is a single, N-Ch single-gate, power MOSFET. It is a lower-cost, low-voltage variant of the already-popular IRF7460, previously released by Fairchild. It has a drain-source voltage rating of 60V and a drain current rating of 23A. In addition, the IRF7460PBF has improved on-state and off-state characteristics, providing better performance when driving inductive and capacitive loads. The IRF7460PBF is an ideal choice for applications that require power MOSFETs with a very low on-resistance and fast switching speeds. It is commonly used in switching power supplies, industrial process control, and automotive applications. The IRF7460PBF has been designed to provide reliable performance and cost savings, making it an ideal choice for a variety of applications. The IRF7460PBF is part of a family of power MOSFETs that use the same design, but have slightly different characteristics. All devices in the family feature a low on-resistance (RDSon) and low gate charge (Qg). In addition, they provide fast switching speeds and minimal switch-on delays, making them well-suited to a wide range of applications. The working principle of the IRF7460PBF is simple and straightforward. This MOSFET operates like a switch, in that it is capable of controlling the flow of current between its source and drain terminals. When the gate voltage is below its threshold voltage, the IRF7460PBF is in its ‘off’ state and no current will flow. When the gate voltage is above the threshold, the MOSFET is in its ‘on’ state and current will flow, allowing power to be regulated. The IRF7460PBF also has built-in protection features, such as over-current and thermal shutdowns, as well as ESD and EMI protection. This ensures the device will work safely, and will protect both itself and the circuitry connected to it. In conclusion, the IRF7460PBF is a low-voltage, low-cost power MOSFET that is suitable for a variety of applications. It features a low on-resistance, fast switching speeds, and reliable performance. The device is capable of controlling current between its source and drain terminals, and also has built-in safety features. As such, the IRF7460PBF is an effective, economical choice for controlling power in a range of applications.

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