Allicdata Part #: | IRF7460PBFTR-ND |
Manufacturer Part#: |
IRF7460TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 12A 8-SOIC |
More Detail: | N-Channel 20V 12A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | IRF7460TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF7460TRPBF is a popular N-channel MOSFET device. The device is a single-gate enhancement-mode MOSFET (metal oxide semiconductor field-effect transistor) which makes it ideal for a range of application fields. In this article, we\'ll look at the working principles and applications of this device.
Working Principles
The IRF7460TRPBF is designed for applications that use low- to medium-power. The device is able to provide excellent performance with respect to input and output characteristics. The device consists of a metal oxide semiconductor layer which acts as a dielectric between the gate and the source/drain terminals. This dielectric layer is what allows the device to maintain its excellent performance.
The metal oxide semiconductor layer is also what allows the device to switch with fast speed. This is due to the dielectric layer\'s ability to dissipate relatively small amounts of power. This means that the device is able to switch quickly and efficiently, making it ideal for applications that involve high-speed switching.
The IRF7460TRPBF is also able to efficiently conduct current in both directions. This is due to the device\'s symmetrical structure. This makes the device suitable for use in applications that require extremely low on-resistance as well as high-power handling.
Applications
The IRF7460TRPBF is a popular device for a range of applications. The device can be used in circuit designs to provide both logic level switching and high-speed switching applications. The device is also commonly used in power supply designs, particularly in secondary regulation circuits. This is due to the device\'s ability to operate at relatively high voltages and currents, as well as its low threshold voltage.
The device is also often used in power amplifiers and power amplifier design. This is due to the device\'s ability to provide high gain, low distortion, and low noise. The device also has low power consumption and can be used in battery powered applications.
The IRF7460TRPBF can also be used in applications involving display technologies. This is due to the device\'s excellent switching performance and its ability to drive polarized capacitances. This means that the device can be used to accurately drive LCD and LED displays.
The IRF7460TRPBF is also commonly used in automotive applications. This is due to the device\'s ability to operate at high temperatures and its durability in harsh environments. The device is often used in automotive power systems, lightening systems and engine control systems.
Conclusion
The IRF7460TRPBF is a popular device for a number of different application fields. The device is able to provide excellent performance with respect to input and output characteristics, as well as its ability to provide fast switching speeds and reliable operation in a wide range of environments. The device is most commonly used in power supply designs, display technologies, high-power amplifiers and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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