IRF7484PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF7484 is a single P-channel enhancement mode field effect transistor (FET) which is commonly used for power management operations for a wide range of applications. It is manufactured by International Rectifier (IR), and is designed for power supply management, power switching and motor control applications. This FET is rated for voltage from 40V to 100V with a continuous drain current of 7A as well as 30V Drain-Source Breakdown Voltage.The IRF7484PBF is a MOSFET (metal-oxide-semiconductor FET) that is used for switching applications in power management systems. Since it is P-Channel it works the opposite to the N-Channel FET. The MOSFET is switched on by applying a voltage to its Gate, which increases the drain source current – although the applied voltage has to reach a certain threshold. When the load is connected, the current flows along the drain source area. This is how it is used as a switch in microcontrollers and other low power devices like TTL and CMOS.The IRF7484 has special features like an N-channel at both ends to provide Miller effect compensation and cross conductance reduction. This helps to reduce any unwanted parasitic effects on the device’s overall performance. It also exhibits a fast switching speed and low gate source capacitance. Other features include expanded temperature range to -55 degrees Celsius to 150 degrees Celsius and a very low gate threshold voltage of 1V.The IRF7484 can also be used to drive motor loads as it has a high breakdown voltage & large drain current. It can also be used for power switching applications as it can withstand high reverse led dumping currents. The Gate is protected from dV/dt effects due to Miller effect and cross-conductance reduction.In order to realize its full potential, it is important to consider the IRF7484’s working principle. The device operates through depletion mode of conduction and is composed of four layers. The bottom layer is the Source which is connected to the negative bias and the top layer is the drain which is connected to the positive bias. The Gate is the middle layer which is negatively charged if the voltage applied is higher than the threshold voltage. This helps to create an inversion layer of charge carriers and results in the drain current.The drain current increases with the applied voltage until it reaches its peak value. The Gate source voltage can be varied to create a wide range of output current between the drain source terminals. The device will remain in the steady state when the Gate source voltage is equal to the threshold voltage, which is why the threshold voltage is referred to as the operating point.In conclusion, the IRF7484PBF is an enhancement mode field effect transistor (FET) that is used for power supply management, power switching and motor control applications. It has a very low gate threshold voltage and high breakdown voltage to drive motor loads. Its working principle involves the depletion mode of conduction and with the inversion layer of charge carriers, the drain current can be controlled.

The specific data is subject to PDF, and the above content is for reference