IRF7663TR

Series:	HEXFET®
Packaging:	Cut Tape (CT)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	20 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 5V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	2520pF @ 10V
FET Feature:	--
Power Dissipation (Max):	1.8W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	Micro8™
Package / Case:	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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Introduction

The IRF7663TR is an intelligent, self-programmable low-noise N-channel enhancement mode MOSFET. The device is designed with built-in gate and source protection, high current drive capability, and extremely fast switching rates. The IRF7663TR is an industrial grade, low-noise model that is capable of powering highly sensitive and critical applications. This article will discuss the application field and working principle of the IRF7663TR.

Application Field

The IRF7663TR is a versatile solution for many applications. It is suitable for powering high-speed switching and current control products such as communication and power systems, motor drives, industrial automation, and robotics. It is also ideal for switching applications in a wide variety of environments, from automotive to solar energy to medical equipment. The device features its built-in gate and source protection which provides improved reliability and allows it to operate in arduous conditions. This feature ensures the device\'s integrity and performance in environments that demand high reliability and ruggedness. The device\'s low RDS (on) allows it to operate at high current and temperature levels and provides improved energy efficiencies. Because of its high-current drive capability, the IRF7663TR is also suitable for high-load switching and power conditioners/regulators applications. Its extremely fast switching allows system designers to reduce their total system latency. The device can be used in many different applications such as switching power supplies, DC-DC converters, UPS, AC-DC converters, motor controllers, and lighting controllers.

Working Principle

The IRF7663TR is a low-noise, N-channel enhancement mode MOSFET. In this device, an inversion channel is generated in an N-type semiconductor substrate by applying voltages across its two terminals named source and drain. When a voltage is applied between the gate and source terminals, the depletion zone will narrow and enhance the current flow between the source and drain terminals that results in the device\'s ON state. The device is designed with a built-in gate protection circuit that helps to protect the gate from electrostatic discharges and provides a stable ON/OFF state.Furthermore, the device features high current drive capability that allows it to operate in harsh conditions for longer periods. The IRF7663TR\'s low RDS (on) ensures high performance, improved energy efficiency, and low switch-node losses. Additionally, the device is designed with a high switching speed that allows the system designers to reduce their total system latency.

Conclusion

The IRF7663TR is an industrial-grade, low-noise N-channel enhancement mode MOSFET that is designed with built-in gate and source protection, high current drive capability, and extremely fast switching rates. The device is suitable for powering high-speed switching, current control products, high load switching and power conditioner/regulator applications. It is also designed with a low RDS (on) which ensures high performance and improved energy efficiency. Furthermore, the device is designed with a high switching speed that allows the system designers to reduce their total system latency.

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