Allicdata Part #: | IRF7663TRPBFTR-ND |
Manufacturer Part#: |
IRF7663TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 8.2A MICRO8 |
More Detail: | P-Channel 20V 8.2A (Ta) 1.8W (Ta) Surface Mount Mi... |
DataSheet: | IRF7663TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | Micro8™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2520pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF7663TRPBF is a part of the N-channel hexa FET family of devices from Infineon Technologies. This is a product that combines high power handling capability and superior ruggedness for superior reliability and performance. It is mainly used for switching, amplifying, and rectification purposes in industrial, commercial, communications, and consumer applications.
The IRF7663TRPBF belongs to a class of devices known as metal-oxide-semiconductor field-effect transistors (MOSFETs). These are three-terminal devices that use a metal gate as the control element and a semiconductor such as a Si or Ge substrate as the semiconductor material. Their operation depends on the movement of charge carriers passing through the semiconductor material between the gate and the drain, which can be changed by applying a bias voltage.
The IRF7663TRPBF, in particular, is a N-channel MOSFET with a voltage range of logic level to 100V and a 0.65 Ohm on-resistance when the drain-source voltage is 5V. It also has a low parasitic capacitance and is avalanche rated. This makes it ideal for high-speed switching applications.
The basic working principle of the IRF7663TRPBF is relatively straightforward. When no voltage is applied to its gate, the MOSFET is said to be in the off-state. This means that there is no current flow from the source to the drain. However, when the gate voltage is raised to a certain threshold level, the MOSFET enters a conductive state, with current flowing from the source to the drain. This current is controlled by the magnitude of the gate-source voltage applied.
The IRF7663TRPBF is most commonly used in amplifying, switching, rectification, and protection circuits such as those found in consumer, commercial, and industrial equipment. It can be used to control the switching and amplification of current to various components in a circuit. It is also used to provide protection from electrostatic discharge, over-current, and over-voltage protection in high-voltage and high-current applications.
The IRF7663TRPBF is also suitable for use in high power applications such as motor switching, high-speed analog signal switching, high-pratical frequency application, and high current load switching. Its rugged and reliable design makes it suitable for use in industrial, commercial, and communication applications. This makes it a versatile choice for those looking for reliable switching performance.
Overall, the IRF7663TRPBF is an ideal solution for switching, amplifying and rectification in a variety of scenarios. Its low on-resistance combined with its avalanche rating make it suitable for use in high-speed switching applications. It can also be used in high-power applications, with its rugged and reliable design ensuring reliable performance. With its versatile design, it can be used for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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