IRF7748L1TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRF7748L1TRPBFTR-ND |
Manufacturer Part#: |
IRF7748L1TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 28A DIRECTFETL6 |
More Detail: | N-Channel 60V 28A (Ta), 148A (Tc) 3.3W (Ta), 94W (... |
DataSheet: | IRF7748L1TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | DirectFET™ Isometric L6 |
Supplier Device Package: | DIRECTFET L6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8075pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 89A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 148A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF7748L1TRPBF is a type of Power MOSFETs specially designed for high power amplifying applications with improved frequency stability, excellent thermal characteristics and low on resistance. It is manufactured by Infineon Technologies, a leading semiconductor company. This power MOSFET is ideal for many power management applications such as communication, consumer and automotive.
IRF7748L1TRPBF is a Low On-resistance, Low Gate Charge Power MOSFET. This power MOSFET has a drain source voltage (VDSS) of 100V, a drain current (ID) of 25A and a channel charge (Qg) of 15nC, making for an efficient device. It has very low RDS(on) of 0.013 Ω and is capable of withstanding a maximum gate voltage (Vgs) of 20V. This makes it suitable for high power applications that require excellent stability, thermal characteristics and low RDS(on).
The IRF7748L1TRPBF is a P-Channel MOSFET. Its basic purpose is to control the flow of electricity between a source and a load, while providing amplification. It consists of a metal-oxide-semiconductor (MOS) between an insulated gate and a substrate. The MOS constructs a depletion region which functions as the gate of the FET, allowing or restricting the flow of the drain current in response to the gate voltage. As the gate voltage increases, the MOSFET is turned “on”, and the drain current is controlled.
Due to its low RDS(on) and impressive thermal characteristics, the IRF7748L1TRPBF is applicable for a wide range of uses, such as industrial and automotive, communications, consumer and computing applications. This device is also excellent for portable power applications due to its low on-resistance, low gate charge and wide operating temperature range.
The IRF7748L1TRPBF can increase efficiency and reliability in an array of different applications. Its low on-resistance helps it to save a lot of power, leading to decreased electromagnetic interference (EMI) and system costs. Its wide voltage range makes it suitable for high voltage power applications, as well as its high power output. Its reliability also allows it to be used in applications with stringent environmental requirements.
The IRF7748L1TRPBF is widely used in all kinds of power management applications. It is highly recommended and plenty of manufacturers offer it as the preferential solution in many power circuits. This device can provide excellent power efficiency, reliability and stability. It is also increasingly used in automotive and industrial applications that require reliable performance, with Infineon Technologies being a leader in this field.
The specific data is subject to PDF, and the above content is for reference
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