Allicdata Part #: | IRF7807ATR-ND |
Manufacturer Part#: |
IRF7807ATR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 8.3A 8-SOIC |
More Detail: | N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | IRF7807ATR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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UPFETs, or unipolar field-effect transistors, feature an enhanced structure compared to standard FETs. It combines the best attributes of P-channel and N-channel MOSFETs, and is known as an integrated FET, or iFET. It is noted for its extremely low on-resistance and its excellent thermal performance.
The IRF7807ATR is one of the most popular iFETs on the market due to its outstanding performance. This iFET is a 60V FET that can provide a maximum breakdown voltage (Vdss) of 60V. It has an on-resistance of 14mΩ and a maximum gate charge of 16nC. The part is also extremely fast, with a maximum rise time of 10ns and a maximum fall time of 10ns. It can operate at temperatures as high as 175°C.
The IRF7807ATR is widely used in a variety of applications, including motor control, high-voltage power supply, battery control, and automotive applications. It is also extremely well-suited for battery-powered applications due to its low operating current.
The IRF7807ATR is a P-channel MOSFET. P-channel MOSFETs are normally-on transistors, meaning they require a certain voltage on the gate to turn off. This voltage must be at least 2.5V higher than the source voltage.
Like all FETs, the IRF7807ATR works by controlling the voltage at the gate terminal. This terminal is insulated from the source and drain terminals, and it controls the flow of electrons between them. In this sense, the voltage at the gate can be seen as a control switch to regulate the current between the source and drain.
The IRF7807ATR can be used in a variety of configurations, depending on the application. It can be used in a saturated or enhanced mode, depending on the circuit. In saturated mode, the FET is similar to a switch, allowing current to flow freely when the voltage is applied to the gate. In enhanced mode, the voltage is not sufficient to turn the FET off completely, and some current can still flow even when the gate voltage is at 0.
In addition to its excellent performance, the IRF7807ATR offers a number of features that make it ideal for many applications. It is extremely fast and has low gate resistance, making it an excellent choice for high-speed switching. It also features an extremely low on-resistance, making it an excellent choice for power management applications. Lastly, it is capable of operating at temperatures up to 175°C, making it an excellent choice for high-temperature applications.
The IRF7807ATR is an excellent choice for a variety of applications, due to its excellent performance, low cost, and high temperature tolerance. It is a popular choice for motor control, power supply, and automotive applications, as well as other applications that require low operating current and fast switching.
The specific data is subject to PDF, and the above content is for reference
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