Allicdata Part #: | IRF7807D1PBF-ND |
Manufacturer Part#: |
IRF7807D1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 8.3A 8-SOIC |
More Detail: | N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | IRF7807D1PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF7807D1PBF is an advanced insulated gate field effect transistor that has several uses in the field of semiconductor technology. This area is considered one of the most cutting-edge technologies for helping to reduce energy consumption, increase efficiency, and control electrical devices. IRF7807D1PBF transistors are used in many applications, including high-power, high-frequency switching, motor speed control, and analog applications, as well as power conversion.
IRF7807D1PBF is a single high drain current, low on-resistance, N-Channel MOSFET, which is specially designed to result in high-speed switching, low gate capacitance, and high-switching current. This combination makes the transistor ideal for applications that require high-frequency switching, allowing the device to handle a wide range of frequencies.
This device is a four-pin package and offers excellent efficiency, power saving, and low voltage operation, making it ideal for applications that require high current power conversion. It has a relatively high drain current but also maintains a low input and output impedance, allowing the device to dissipate less power than other available MOSFETs.
The basic working principle of the IRF7807D1PBF transistor is simple. When the gate voltage is high, it acts as a conductor and the source and drain terminals connect, forming a current path. However, when the gate voltage is lowered, the device acts as an insulator, preventing current from passing through the source-drain terminals. This process of controlling current is how the IRF7807D1PBF is able to maintain high-frequency switching.
This device is useful in applications that require high-frequency switching and high current power conversion. It has application in motor speed control, where it can be used to control the output current and speed of the motor. It can also be used in analog applications such as amplifier and buffer circuits. Additionally, the low on-resistance, along with its high switching current, make it ideal for power saving applications.
In addition, the IRF7807D1PBF can operate at a wide range of frequencies, which is useful in applications that require precise timing. This is because the transistor is capable of switching quickly, allowing for accurate timing. It is also beneficial for use in applications that require a low input impedance, which can help reduce the losses associated with power conversions.
Overall, the IRF7807D1PBF is a versatile, efficient, and powerful transistor. Its low on-resistance, high switching current, and wide range of operation make it suitable for a variety of applications, including high-frequency switching, high-current power conversion, analog circuits, and motor speed control. Additionally its small four-pin package results in maximum power savings in applications that require high current power conversion. As such, the IRF7807D1PBF is ideal for a variety of uses.
The specific data is subject to PDF, and the above content is for reference
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