IRF7807VD2PBF

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IRF7807VD2PBF is a type of single-drain MOSFET with a continuous drain current of 8A and a gate-drain voltage of 940mV at a temperature of 25 °C. This device is designed for applications where high efficiency and power dissipation are desired.

IRF7807VD2PBF is most commonly used as a simple switch in many kinds of circuits, such as television receivers, mobile phones and computers. It can also be used to regulate the output voltage of power supplies, such as those used in computer motherboards, LCD monitors and LED lighting systems.

The main physical characteristics of the IRF7807VD2PBF include its very low drain-source on any-state resistance of 0.075 ohms and a maximum drain source voltage of 20V. It has a relatively low gate capacitance range of 270pF and a maximum operating temperature of 150°C.

The IRF7807VD2PBF was designed using a low-power process (LPP) process technology, which allows for low on-state resistance without sacrificing drain current or power dissipation. This device is also designed to minimize the effect of gate-threshold voltage.

The working principle of the IRF7807VD2PBF is relatively simple. When the gate-voltage is applied, the P-type region beneath the device’s metal oxide semiconductor layer becomes positively charged. This in turn increases the potential barrier between the N-type source and the drain region, making it difficult for the current to cross it. This is the so-called on-state of the MOSFET. To turn off the device, the applied voltage on the gate must reach 0V.

The drain current of the IRF7807VD2PBF is affected by several parameters such as the drain-to-source voltage and the gate voltage. As the drain-to-source voltage increases, the channel width of the MOSFET’s electrical channel decreases, resulting in decreased drain current. The gate voltage also affects the drain current, as it determines the threshold voltage of the device.

In conclusion, the IRF7807VD2PBF is designed for applications that require high efficiency and power dissipation. It works with a relatively simple principle, wherein the gate voltage affects the potential barrier between the N-type source and the drain region. The on-state resistance and the gate capacitance range are relatively low, making this device a great choice for power supplies and other applications.

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