Allicdata Part #: | IRF7807VPBF-ND |
Manufacturer Part#: |
IRF7807VPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 8.3A 8-SOIC |
More Detail: | N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | IRF7807VPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRF7807VPBF is a member of the family of single-Row, three-terminal, high current Power MOSFETs from International Rectifier. This device is optimized for power switching applications such as DC to DC converters, battery management, thermal management, and off-line power supplies. It supports low power loss and high efficiency for a wide variety of designs with excellent switching speed, low gate charge, and a low threshold voltage (VGSth).
The IRF7807VPBF comes in a TO-220 package and operates in the temperature range of -55 to +150 degrees Celsius. It has a maximum drain current rating of 220A, a total gate charge of 183uC, a maximum power dissipation of 49W, and a breakdown voltage of -10V. The IRF7807VPBF has a maximum on-state resistance of 0.012 ohms and a low gate-to-source leakage current.
Application Fields
The IRF7807VPBF is ideal for use in power switching applications where efficiency, power loss, and reliability are essential. These include DC-DC converters, battery management, power supplies, solar panels, controllers, and voltage regulators. It is suitable for high power density applications with high current and power levels, such as hybrid and electric vehicles, notebook computers, telecom rectifiers, and battery-powered tools.
Working Principle
The IRF7807VPBF operates as a switch between the drain and source terminals. The gate terminal controls the conductive state between the drain and source by controlling the voltage at the gate. When the gate is high (positive voltage relative to the source), the channel is closed, therefore not allowing current to flow through. When the gate voltage decreases below the threshold voltage (VGSth), the channel opens and current can then flow from the drain to source.
An important attribute of the IRF7807VPBF is its low gate capacitance and low gate charge, which together result in ultra-fast switching times. Furthermore, its low on-state resistance enables the device to handle high current effectively and reduce power losses.
The IRF7807VPBF is designed to withstand high voltages and has built-in protection mechanisms that prevent damage to the device. Its avalanche breakers allow the device to be safely used in applications with high transient voltages. It has a high tolerance to surge currents, allowing it to handle a wide variety of power switching applications with minimal stress on the device.
The specific data is subject to PDF, and the above content is for reference
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