Allicdata Part #: | IRF7807VPBFTR-ND |
Manufacturer Part#: |
IRF7807VTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 8.3A 8-SOIC |
More Detail: | N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | IRF7807VTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF7807VTRPBF is an Enhanced Gang/ System PIN-diode switch family which consists of single die devices with an on-board voltage regulator, minimize switching loss and minimize external components. Each device is composed of a 40V N-Channel MOSFET and a 0.2nF decoupling capacitor. This combination offers improved performance in terms of size and efficiency when compared with separate discrete MOSFETs and fixed capacitors. Additionally, the integrated on-board regulator helps keep the switch in its linear region, reducing cross-conduction and thermal management issues.
The IRF7807VTRPBF is ideal for a variety of applications, including automotive system and telecommunications control, as well as wireless communication receivers. It is a rugged 3 Watt switch constructed in a compact SOIC-8 package, which makes it suitable for a wide variety of automotive and communications products. The SOIC-8 package measures just 5.5mm x 3.2mm x 1.1mm and can be used with DC voltages as low as 10V. The device is rated at 6A and its linear region extends from 15V to 40V.
The IRF7807VTRPBF is also a low-loss switch with a breakdown voltage greater than 40V, making it suitable for automotive high-efficiency and robust applications. The device offers low-cross conduction, slew rate and low-capacitive switching. It has a low gate impedance and low gate off-capacitance, which helps reduce switching losses and improve system performance.
The IRF7807VTRPBF application field includes automotive operation and diagnostics, automotive control, and LED lighting, as well as operation of power switch/ sensor system. The working principle of the IRF7807VTRPBF is based on a N-channel MOSFET. N-channel MOSFETs switch on and off with a voltage applied to the gate and have a fixed on-resistance, limited mostly by the size of the chip and the amount of heat lost in switching.
The on-board voltage regulator monitors input voltage and channel voltage, ensuring that the system operates efficiently in the linear region of operation. It also provides crisp switching, limiting ringing and enabling high speed switching. The device also offers a variety of protection features which helps ensure safe and reliable operation in vehicle applications.
In addition, the IRF7807VTRPBF has a built-in temperature correcting circuit, allowing it to operate in temperatures as low as -40°C. This ensures that the device performs at its best and prevents any damage from thermal overload.
The combination of features and capabilities of the IRF7807VTRPBF make it suitable for a wide variety of automotive and communications applications. The device is a reliable, low-power, low-loss and high quality device, making it ideal for use in designs ranging from automotive systems, to high-efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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