Allicdata Part #: | IRF7842PBF-ND |
Manufacturer Part#: |
IRF7842PBF |
Price: | $ 1.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 18A 8-SOIC |
More Detail: | N-Channel 40V 18A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | IRF7842PBF Datasheet/PDF |
Quantity: | 24 |
1 +: | $ 1.23480 |
10 +: | $ 1.09746 |
100 +: | $ 0.87917 |
500 +: | $ 0.69426 |
1000 +: | $ 0.55979 |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRF7842PBF is a field-effect transistor (FET), more specifically a metal-oxide-semiconductor FET (MOSFET). It is a single-transistor --- this means it consists of a single transistor. It is a voltage- and current-controlled device. The MOSFET is one of the most popular types of FETs, due to its high efficiency, low input and output impedances, and wide range of operating conditions.
When considering its major applications, the IRF7842PBF can be used to amplify, switching, and other functions. One of its primary applications is as the power amplifier for audio and electrical circuits. It is also used for the implementation of power supplies, such as those found in home appliances. Additionally, this device can be used in motor control and other current and voltage regulation applications.
The basic operating principle of an FET or MOSFET is that the drain current flow is controlled by the gate voltage; that is, the higher the gate voltage, the higher the drain current, and vice versa. This is known as the principle of capacitive control. Basically, when a positive voltage is applied to the gate, a depletion layer forms between the drain and source, effectively blocking the current flow. This is known as the closed position of the MOSFET, and is used in switching applications.
On the other hand, when a negative voltage is applied to the gate, the depletion layer is destroyed, allowing current to flow. This is known as the open position of the MOSFET, and is used in amplifying applications. In particular, the IRF7842PBF can handle high current with good efficiency and is used in many power supply and switching applications.
The IRF7842PBF is also available in a surface mount package. It is important to note that when used in a surface mount application, the device needs to be soldered using the correct type of solder. Additionally, the solder needs to be applied in a manner that ensures good electrical contact and bonding between the device and the substrate.
Overall, the IRF7842PBF is widely used in electrical circuits. It has several important benefits, including its high efficiency, low input and output impedances, and wide range of operating conditions. It is also available in various surface mount packages, allowing more accurate placement of the device on the circuit board.
The specific data is subject to PDF, and the above content is for reference
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