IRF8513TRPBF Discrete Semiconductor Products

Infineon IRF8513TRPBF is a N-channel enhancement mode power field effect transistor (FET) which is a part of the TruFETTM family. It belongs to the Power MOSFETTM family and is built with the advanced level of vertical DMOS technology, making it a robust and highly efficient device. This MOSFET enables superior performance with maximum efficiency and low on-resistance. It is suitable for use in various applications where low-voltage switching and rail-to-rail power conversions are required.

The device is an integrated circuit, which consists of nine independent N-channel MOSFETs, packaged in a single 8 pin SOIC. The typical Vds(ON) of the device is 14V and the Id rating is 1.5A with a series RDS(on) of 0.0063 Ohms. The IRF8513TRPBF is designed to operate in applications where low permittivity is required and where high-side and low-side switching is needed.

IRF8513TRPBF is ideal for use in applications that require high-side or low-side switching and a driver IC. The device can be used in low- to medium-voltage applications where low-side or floating source voltage is needed. Additionally, the combination of low on-resistance, high power capability and low gate charge gives this device superior performance when compared to other devices.

The device is an N-channel enhancement mode MOSFET, capable of switching voltages up to 28V. It utilizes advanced vertical DMOS technology and has an umbrella-shaped drift region. The device has superior switching performance and low on-resistance, making it suitable for use in high-current, high-frequency applications. The device also has a low gate-threshold voltage and high output current capability, which makes it well-suited for use in applications with low-voltage switching.

The working principle behind the IRF8513TRPBF is the same as other MOSFETs. The source is connected to the drain and a voltage applied to the gate. This generates an electric field across the gate-to-channel junction, inducing a flow of electrons from the source (free electrons) to the drain (the collector region). This flow of electrons creates a current between the source and the drain. The current flow is regulated by the gate voltage, so by increasing the voltage applied to the gate, the current flow increases.

In conclusion, the IRF8513TRPBF is a robust and highly efficient device with a low RDS(ON) value and fast switching speed. The device is suitable for use in applications where low-voltage switching, rail-to-rail power conversions, low permittivity and high-side/low-side switching are required. Its low gate-charge, high output current capability, and low-voltage switching make it a versatile and efficient MOSFET choice.