IRF840ASTRRPBF Allicdata Electronics

IRF840ASTRRPBF Discrete Semiconductor Products

Allicdata Part #:

IRF840ASTRRPBFTR-ND

Manufacturer Part#:

IRF840ASTRRPBF

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 8A D2PAK
More Detail: N-Channel 500V 8A (Tc) 125W (Tc) Surface Mount D2P...
DataSheet: IRF840ASTRRPBF datasheetIRF840ASTRRPBF Datasheet/PDF
Quantity: 1000
800 +: $ 1.21607
Stock 1000Can Ship Immediately
$ 1.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRF840ASTRRPBF is a complete transistor and it has several unique applications in the world of electronics today. It is primarily used as an FET or field effect transistor, which is the most popular kind of device used in modern applications. This type of transistor works by controlling the electric current between two points, which are the source and the drain. It does this by changing the voltage of the gate, which is controlled by an external signal.

The IRF840ASTRRPBF is a TO-220 voltage-controlled device that works with a single power source. It is also known as a single-level Field Effect Transistor (FET). It has a low on-state resistance of 1.2 ohms, which helps in increasing the efficiency of the device. It is designed to be a low-noise device, with a high current-handling capacity and high frequency performance. It is ideal for use in a range of low-voltage switching applications.

In terms of working principles, the IRF840ASTRRPBF works on the principle of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure. It has a gate, a drain and a source, and an insulated gate which is able to control the electric current. When a gate voltage is applied to the device, the electrons are drawn from the source to the gate. This causes a channel to form between the drain and the source, allowing current to flow. The channel width is determined by the gate voltage supplied. As such, a voltage change at the gate results in a change in the current flowing through the device. This makes it extremely useful for controlling the output current of a device.

In terms of application field, the IRF840ASTRRPBF is most commonly used in digital integrated circuits and in digital switching applications. It is also used in motor control applications and in low-voltage power supplies. Its efficient current-handling capacity makes it an ideal choice for use in voltage-controlled switches, such as those used in switching power supplies and motor controllers. Additionally, the device can also be used in other applications, such as in regulated and variable power supplies, in general-purpose switching circuits, and in voltage regulators.

Overall, the IRF840ASTRRPBF is a popular and versatile field-effect transistor that is often found in a wide range of power control applications today. Its ability to control current in a very low-voltage environment makes it a preferred choice for use in many sensitive applications. Additionally, its low-noise performance, high current-handling capacity and high frequency performance also make it an attractive option for different kinds of switching applications. For these reasons, it is an increasingly popular choice for many different kinds of applications, from regulated power supplies to digital integrated circuits.

The specific data is subject to PDF, and the above content is for reference

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