IRF8306MTR1PBF

IRF8306MTR1PBF is one of the 2-MOSFET range of discrete, single N-channel MOSFETs. It is intended for use in applications where low ON resistance, fast switching and low voltage drive are required, such as in cellular systems, and a wide range of general purpose switching.

The IRF8306MTR1PBF has a 10A drain current and an RDS (on) of 80mΩ at 10V. The device has a low gate charge for high speed switching and a Pb-free lead finish for enhanced environmental compatibility.

Application Field

IRF8306MTR1PBF can be used in a variety of switching related both analog and digital applications including power management and signal processing for cellular base station and various kinds of consumer electronics including computer peripherals, portable and semi-portable products. It is also suitable for temperature/load control and home appliance applications.

Working Principle

A 2-MOSFET is one of the types of MOSFETs, which is a type of transistor that utilizes two metal-oxide-semiconductor (MOS) layers separated by an insulating layer. It has three terminals, two of which are connected to the respective MOS layers while the third is the gate terminal which controls the conductivity of the circuit. In essence, the gate terminal acts as a switch to control the current flow between the two MOS layers.

When a negative voltage is connected to the gate terminal of the IRF8306MTR1PBF, the negative charge from the gate terminal repels the electrons from the source terminal to the drain terminal. This creates a channel between the source and drain terminals and allows a current flow from source to drain. As the drain terminal has a negative charge due to electrons leaving the source terminal, it will attract the holes from the drain terminal to the source terminal, consequently there is no current flow in the reverse direction.

When the gate voltage is turned off, the electrons return to the source terminal, creating a potential barrier between the source and drain terminals known as the “pinch-off”. This prevents electrons from flowing across the drain-source junction, and thus no current is able to pass through.

Conclusion

In conclusion, the IRF8306MTR1PBF is a single-channel N-MOSFET designed for fast switching and low voltage drive applications. Its low gate charge and Pb-free lead finish make it suitable for a wide variety of consumer electronics applications. Its working principle is based on the control of the electrical current flow between the source and drain terminals via a negative voltage applied to the gate terminal.