IRF8707TRPBF

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The IRF8707TRPBF is a single N-Channel MOSFET developed by International Rectifier. It is ideal for use in a variety of applications and potentially offers improved performance over existing technologies. This MOSFET features an extended drain-source voltage range and an improved generation of fast switching and dV/dt qualities that can enable much higher application frequencies. Single-channel Power MOSFETs are typically employed as switching devices in high-power and high-temperature applications, and the IRF8707TRPBF is no exception.

Application Fields

The IRF8707TRPBF operates best over extended drain-source voltage ranges, allowing it to be used in applications traditionally powered by VGS (gate-source voltage) values up to 10V. It is typically found in boost converters, synchronous rectifiers, motor control, or Class D audio amplifiers. The low power consumption, fast switching speed, and excellent dV/dt qualities of this MOSFET allow it to be used in higher power, more efficient, and more reliable designs than other MOSFETs, especially those with a short channel length.

Products featuring the IRF8707TRPBF are sometimes used in lighting control applications. Smart lighting systems relying on these types of MOSFETs can be found in many commercial and industrial lighting applications. The fast switching speed and high dV/dt capabilities of the IRF8707TRPBF makes it ideal for use in dimmable LED driver solutions. It is also suitable for LED strips, LED drivers, LED lighting fixtures, LED signage, LED lighting controllers, and other related applications.

The IRF8707TRPBF is also commonly used in battery management applications. Since this MOSFET offers excellent charge/discharge capabilities, it is very well suited for larger battery packs and cell stacks. It is often found in scooters and other battery-powered vehicles, as well as solar energy storage systems. Its improved switching speed and thermal performance make it ideal for these types of applications.

Working Principle

The IRF8707TRPBF is a single N-Channel enhancement MOSFET. The majority carrier in an N-Channel MOSFET is the majority electron. In an N-Channel MOSFET, majority electrons can move freely from the source to the drain. When a positive voltage is applied to the gate terminal with respect to the source, the electric field produced in the charge sheet will attract the majority electrons and create an inversion layer at the interface between the gate oxide and the channel region. By controlling the magnitude of the gate voltage, the number of majority electrons attracted to the gate oxide can be dynamically adjusted, allowing the current flow in the channel region to be modulated accordingly.

The IRF8707TRPBF provides improved efficiency and power density, thanks to its optimized channel geometry. The MOSFET also features excellent high-temp operation, as well as lower power dissipation. Additionally, it provides improved transient response performance, enabling high frequency operation.

The IRF8707TRPBF is capable of withstanding high voltages, even when subjected to significant thermal stress. This way, it provides the required robustness for applications requiring full power capabilities over extended temperature ranges. This is why it is such a popular choice for a variety of high-power applications.

Conclusion

The IRF8707TRPBF is a single-channel Power MOSFET designed to offer improved performance and reliability over existing technologies. It is suitable for numerous applications, including boost converters, synchronous rectifiers, motor control, and Class D audio amplifiers. The MOSFET offers high switching speed and excellent dV/dt qualities, allowing it to be used in both battery management and lighting control applications. Its optimized channel geometry and high-temperature operation make it a popular choice for a variety of high-power applications.

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