Allicdata Part #: | IRF830BPBF-ND |
Manufacturer Part#: |
IRF830BPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 5.3A TO-220AB |
More Detail: | N-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO... |
DataSheet: | IRF830BPBF Datasheet/PDF |
Quantity: | 39 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF830BPBF is a type of FET (Field-effect Transistor) that falls under the category of Single MOSFETs. It is designed to be used in low voltage switched-mode power supplies, and is ideal for use in a wide range of applications including motor control, welding, and solar energy systems, as well as other high-power applications.
The IRF830BPBF FET has a molded plastic body with a Pb-free termination finish, providing superior moisture and thermal resistance. The high voltage tolerance and low on-resistance provide more power handling and switching options. This FET is also designed with a fast switching speed, which allows it to be used in high frequency switching applications. In addition, the FET\'s low gate charge and body diode configuration allow it to provide superior performance in applications involving slow switching.
The working principle behind an IRF830BPBF FET is simple. It is a three-terminal device that controls the flow of current between two terminals using an electric field. The gate terminal is used to control the current flow. When a voltage is applied to the gate terminal, it creates an electric field, which either increases or decreases the current flow between the two remaining terminals. When the voltage at the gate terminal is increased, the current flow is increased, and vice versa.
The IRF830BPBF FET is designed for use in low voltage switched-mode power supplies, and is suitable for use in a wide range of applications. Its low on-resistance, high voltage tolerance, and fast switching speed, make it an excellent choice for applications involving motor control, welding, and solar energy systems. In addition, the FET’s low gate charge and body diode configuration also make it ideal for applications involving slow switching.
The IRF830BPBF FET is a reliable and versatile device that is suitable for use in a wide range of applications. Its fast switching speed, high voltage tolerance, and low on-resistance make it an ideal choice for applications requiring reliable, efficient power control and switching. Its low gate charge and body diode configuration make it an ideal choice for applications involving slow switching, making it a great choice for use in low voltage switched-mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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