Allicdata Part #: | IRF830ALPBF-ND |
Manufacturer Part#: |
IRF830ALPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 5A TO262-3 |
More Detail: | N-Channel 500V 5A (Tc) 3.1W (Ta), 74W (Tc) Through... |
DataSheet: | IRF830ALPBF Datasheet/PDF |
Quantity: | 988 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF830ALPBF is a N-channel metal–oxide–semiconductor field-effect transistor (MOSFET) which is commonly found in automation applications where the need for high switching speeds is a priority. This MOSFET is widely used in various applications such as power supplies, industrial machinery, car audio and video, and so on. As with any MOSFET, the IRF830ALPBF is capable of providing high current handling capacity and low on-state resistance, as well as stable switching behavior. With a maximum RDS(on) of 36.5 mΩ, this MOSFET can be used to control up to 5 V and several amperes, making it highly suitable for a variety of automotive applications.
The working principle of the IRF830ALPBF is based on the use of MOSFETs to control the current flow. MOSFETs are regulated devices which can be used to control the flow of electricity in a circuit. In the case of the IRF830ALPBF, the device works as a voltage-controlled switch. The gate voltage, or VG, is used to control the flow of current. By applying a positive voltage to the gate, the device can be turned on, allowing for the current to flow in the circuit. By applying a negative voltage to the gate, the device can be turned off, thus preventing the current from flowing in the circuit.
The IRF830ALPBF is highly reliable, with a maximum power dissipation rating of up to 600 Watts. It also has a very low gate driving voltage of 2 V and an on-state drain current of 12 amperes. These features make it ideal for a variety of applications, such as high-current DC-DC conversion, motor control, and voltage regulation.
The IRF830ALPBF is a robust device which is capable of operating at temperatures ranging from -55°C to 175°C, making it suitable for use in extreme temperature environments. It also features a wide range of package options, from SOT-23 to D2PAK, that allow for its convenient integration into any design.
Overall, the IRF830ALPBF is an excellent choice for industrial, automotive, and consumer applications. Its wide range of features and high reliability make it an ideal device for a variety of applications. With its excellent switching speeds and low on-state resistance, it can be used to control voltage and current in a variety of applications. In conclusion, the IRF830ALPBF is an ideal choice for applications requiring high power and high currents.
The specific data is subject to PDF, and the above content is for reference
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