Allicdata Part #: | IRF830S-ND |
Manufacturer Part#: |
IRF830S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 4.5A D2PAK |
More Detail: | N-Channel 500V 4.5A (Tc) 3.1W (Ta), 74W (Tc) Surfa... |
DataSheet: | IRF830S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 610pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRF830S is a field-effect transistor (FET) based on a silicon n-channel metal-oxide-semiconductor (MOS) design. It is is a high-performance transistor designed for audio visual and consumer electronics applications.
The IRF830S is used in a variety of applications, including power supplies, switch mode power supplies, voltage regulators, audio amplifiers, and other high-voltage applications. The high performance and reliability of the IRF830S make it suitable for use in applications that require high-frequency transistors with low gate-source capacitance.
The primary characteristics of the IRF830S that make it a high-performance device include its low on-resistance, low gate-source capacitance, high-frequency operation, and low-threshold voltage. The low on-resistance of the device allows it to switch rapidly, which is necessary for applications that require the device to operate at high frequencies. The low gate-source capacitance allows the device to maintain good switching characteristics over a wide range of frequencies. The high-frequency operation of the IRF830S enables it to be used in applications that require devices that can operate at higher frequencies than conventional FETs. The low threshold voltage makes the device suitable for low voltage applications.
The IRF830S is a single-channel device, meaning it has one gate terminal, one source terminal, and one drain terminal. The source and drain terminals of the device are connected to an external circuit, and the gate terminal is connected to an external control signal. The device is controlled by changing the voltage across the gate terminal. When the voltage across the gate is increased, the IRF830S becomes “on”, allowing current to flow between the source and drain terminals. When the voltage across the gate is decreased, the IRF830S becomes “off” and current flow stops.
The working principle of the IRF830S is similar to that of other MOSFETs. The device works by utilizing the voltage applied to the gate terminal to control the current flow between the source and drain terminals. When the gate terminal is positively charged, the device is said to be in the on-state, allowing current to flow between the drain and source terminals. When the gate terminal is negatively charged, the device is said to be in the off-state, which completely prevents current flow between the drain and source terminals.
The IRF830S is a versatile device that can be used in a variety of applications, including power supplies, switch mode power supplies, voltage regulators, audio amplifiers, and other high-voltage applications. The device\'s high-frequency operation, low on-resistance, and low gate-source capacitance make it an ideal choice for applications that require a device with high performance and excellent reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRF8252TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 25A 8-SON... |
IRF840B | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 8A TO-22... |
IRF820ASPBF | Vishay Silic... | -- | 1110 | MOSFET N-CH 500V 2.5A D2P... |
IRF840LCPBF | Vishay Silic... | -- | 785 | MOSFET N-CH 500V 8A TO-22... |
IRF830ASPBF | Vishay Silic... | 1.45 $ | 77 | MOSFET N-CH 500V 5A D2PAK... |
IRF830SPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 4.5A D2P... |
IRF8327STR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 14A SQN-C... |
IRF8302MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N CH 30V 31A MXN-C... |
IRF8304MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 28A MXN-C... |
IRF8308MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 27A MXN-C... |
IRF8306MTRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 23A DIREC... |
IRF8306MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 23A DIREC... |
IRF8010PBF | Infineon Tec... | -- | 497 | MOSFET N-CH 100V 80A TO-2... |
IRF840ASPBF | Vishay Silic... | -- | 977 | MOSFET N-CH 500V 8A D2PAK... |
IRF840 | STMicroelect... | -- | 117 | MOSFET N-CH 500V 8A TO-22... |
IRF830 | STMicroelect... | -- | 1000 | MOSFET N-CH 500V 4.5A TO-... |
IRF820 | STMicroelect... | -- | 1000 | MOSFET N-CH 500V 4A TO-22... |
IRF820S | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF830S | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 4.5A D2P... |
IRF840S | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 8A D2PAK... |
IRF830AS | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 5A D2PAK... |
IRF840A | Vishay Silic... | -- | 380 | MOSFET N-CH 500V 8A TO-22... |
IRF840AS | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 8A D2PAK... |
IRF840L | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 8A TO-26... |
IRF820AS | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF840LCS | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 8A D2PAK... |
IRF820A | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 2.5A TO-... |
IRF820AL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A TO-... |
IRF830AL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 5A TO262... |
IRF840LCL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 8A TO-26... |
IRF8113PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 17.2A 8-S... |
IRF820ASTRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF820ASTRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF820L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A TO-... |
IRF820STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF820STRR | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 2.5A D2P... |
IRF830ASTRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 5A D2PAK... |
IRF830L | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 4.5A TO-... |
IRF830STRL | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 4.5A D2P... |
IRF830STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A D2P... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...