IRF820PBF

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IRF820PBF is a type of P-Channel MOSFET (metal oxide semiconductor field effect transistor) designed for use as a low-side switch in applications like switching circuits and power supplies. The IRF820PBF provides fast switching operation and low on-state resistance under various conditions. In addition, it has a high peak current capability for pulse loads and a wide operating temperature range for great flexibility when operating in extreme conditions.

Being a P-channel MOSFET, the IRF820PBF is composed of four components- gate, drain, source and body. The gate is made up of a metal gate electrode and a gate insulator between the gate and the substrate which acts like an isolator. When the voltage applied on the gate is positive, it causes a negative electric charge that attracts positive charge carriers from the substrate creating an inversion layer which allows current flow from drain to source. In addition, the source and drain of a MOSFET are formed by reverse biased junctions between the n and p type substrates or body.

Since the IRF820PBF is a low-side switch it should be connected to voltage sources that have different absolute 0 V references. In such cases, when the lower side of the switch is connected to ground, the higher side of the switch should be connected to a negative voltage source to prevent any back EMF (electromotive force). Since the output of a power supply or switching circuits are no longer connected to the ground when the IRF820PBF is in the off-state, loads protected by a fuse or a thermal overwire should also be connected to the higher side of the switch.

The IRF820PBF can operate in temperatures ranging from -55°C to 175°C. It has a maximum drain current of 8.2A with resistance as low as 4.4mΩ and its maximum drain-source voltage is 60V. It can also handle peakcurrents of up to 20A. Furthermore, it has a fast switching performance of less than 10ns making it ideal for high-frequency applications. The IRF820PBF also has a low gate threshold voltage of 3V.

In conclusion, the IRF820PBF is a powerful P-Channel MOSFET that provides fast switching performance, high peak current capabilities and a wide operating temperature range. It is suitable for use in a wide range of applications such as switching circuits and power supplies that require high reliability. As such, it can be used to protect sensitive components in harsh environments or situations.

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