IRF840LCLPBF

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The IRF840LCLPBF is an advanced MOSFET transistor produced by International Rectifier (IR). The device is used for medium power and high frequency applications, such as load switches, level shifting, and on/off control in power management applications. The IRF840LCLPBF is a depletion-mode enhancement-type MOSFET, meaning it has no gate bias when it is turned OFF. When there is a gate-source voltage (VGS) > 0V, the device turns ON and conducts current.

The IRF840LCLPBF is available in a small 4mm x 4mm LLP-32 package which is suitable for space-constrained applications. The device features low on-resistance, low gate charge, and low gate-to-drain capacitance, making it ideal for high speed switching. In addition, the device features good performance over an extended temperature range. The device is available with a drain-source voltage (VDS) rating up to 150V, an on-resistance (RDS(ON)) of 0.07Ω, a thermal resistance (RθJA) of 47°C/W, and a maximum current rating (ID) of 2A. The device also features a fast body diode, allowing it to act as a freewheeling diode for inductive loads.

The IRF840LCLPBF comprises a single MOSFET, or metal oxide semiconductor field effect transistor, a type of transistor often used for high current switching applications. Its single-channel structure means that the source is connected to the drain. The transistor works by controlling the conductivity of the channel between the source and drain, by means of the gate voltage. When a positive voltage is applied to the gate, the channel allows current to flow and the MOSFET is in its ON state; when insufficient voltage is applied, the channel is shut off, and the MOSFET is in its OFF state.

The IRF840LCLPBF is well suited for use in a variety of medium power and high frequency applications. These include load switches, level shifting, and on/off control in power management applications. It is also useful for driving inductive loads, such as motors, solenoids and relays, where its fast body diode allows it to act as a freewheeling diode. In addition, the low on-resistance, low gate charge, and low gate-to-drain capacitance of the device make it suitable for high speed switching applications.

In conclusion, the IRF840LCLPBF is a suitable transistor for multiple applications. The device has a single MOSFET architecture, with low on-resistance, low gate charge, and low gate-to-drain capacitance, making it ideal for high speed switching applications. It is available in a small 4mm x 4mm LLP-32 package and has a drain-source voltage (VDS) rating up to 150V, an on-resistance (RDS(ON)) of 0.07Ω, a thermal resistance (RθJA) of 47°C/W, and a maximum current rating (ID) of 2A. The device is well suited for use in load switches, level shifting, and on/off control in power management applications, as well as for driving inductive loads.

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