
Allicdata Part #: | IRF8304MTRPBFTR-ND |
Manufacturer Part#: |
IRF8304MTRPBF |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 28A MX |
More Detail: | N-Channel 30V 28A (Ta), 170A (Tc) 2.8W (Ta), 100W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.49000 |
10 +: | $ 0.47530 |
100 +: | $ 0.46550 |
1000 +: | $ 0.45570 |
10000 +: | $ 0.44100 |
Vgs(th) (Max) @ Id: | 2.35V @ 100µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Ta), 170A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF8304MTRPBF is a single-channel enhancement-mode Field-Effect Transistor (FET) designed to minimize the on-state resistance (RDS(on)) while providing an optimized trade-off between the RDS(on) and gate charge. This device is housed in a small footprint SO-8 package, making it suitable for a wide range of applications.
The IRF8304MTRPBF is a low-voltage, mid-current device, with a drain-source rating of -55V to +55V and a maximum continuous current of 35A. It has a maximum power dissipation rating of 350mW and a drain current of 4.5A. It also has a 0.3 ohm maximum on-resistance rating, making it suitable for high efficiency applications.
In terms of gate charge, the IRF8304MTRPBF has a total gate charge of 68nC. This makes it suitable for applications with low gate capacitance and low power requirements. Additionally, the device features a low gate threshold voltage, making it suitable for low voltage applications.
The IRF8304MTRPBF can be used in several applications, including switch-mode power supplies, DC/DC converters, motor control, and power management. In power management applications, it can be used to control the flow of power to devices. It can be used in DC/DC converters to regulate the voltage output, or in motor control to regulate the speed of motors. In switch-mode power supplies, it can be used to regulate the output voltage.
As for its working principle, the IRF8304MTRPBF is a field-effect transistor designed to work according to the principle of continuous conduction. This means that when a current is applied to the gate terminal, a voltage is induced between the drain and source, resulting in conduction. The current flows through the drain-source junction, and is proportional to the applied voltage. This allows for precision control of the current.
The IRF8304MTRPBF also features capacitance between the gate and drain-source terminals, which results in the device being able to handle power more efficiently. This capacitance also allows for less loss due to leakage current, increasing the efficiency of the device.
Overall, the IRF8304MTRPBF is a highly efficient, low-voltage, mid-current, single-channel FET with a 0.3 ohm maximum on-resistance rating, a 68nC total gate charge, and a low gate threshold voltage. These features make it suitable for a wide range of applications, including switch-mode power supplies, DC/DC converters, motor control, and power management. Its working principle is based on the principle of continuous conduction, allowing it to provide precision current control. Additionally, its capacitance helps to decrease losses due to leakage current, increasing its overall efficiency.
The specific data is subject to PDF, and the above content is for reference
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