Allicdata Part #: | IRF8910PBFTR-ND |
Manufacturer Part#: |
IRF8910TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 10A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface... |
DataSheet: | IRF8910TRPBF Datasheet/PDF |
Quantity: | 40 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Base Part Number: | IRF8910PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 13.4 mOhm @ 10A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF8910TRPBF is an array of power MOSFETs that provides an impressive range of features and performance advantages, making it a powerful platform for the development and implementation of various components in a wide variety of applications.
The IRF8910TRPBF is based on an N-channel MOSFET and comes in a 24-pin leadless SOIC package, with a single cell reverse-biased diode for each of the twelve transistors. The output of each power MOSFET is available in a TO-220 package with a single IPN1506 and two IPN1507 devices. One IPN1507 power MOSFET is capable of handling up to 24A, while the other can handle up to 150A.
The ability to manage these two powerful devices makes the IRF8910TRPBF ideal for applications where large current and high-frequency performance are essential, such as power supplies, switching power supplies, audio amplifiers, and many other applications. The integrated diode construction helps minimize package size and simplifies the power supply design.
The IRF8910TRPBF is designed for continuous operation within the safe operating area (SOA) specified by the manufacturer. This device utilizes low-resistance construction to achieve both impedance control and low output impedance values, which allow it to handle higher current loads with better output power efficiency and greater reliability. In addition, the device features advanced RDSon temperature-tracking technology that allows it to operate more efficiently in both high- and low-temperature environments.
The IRF8910TRPBF also features a high-performance low-voltage (HVL) voltage-maintaining circuit to protect the MOSFETs from hotelectrical spikes. The integrated gate drive features an internal clamping diodes roll-off circuit to help reduce electromagnetic interference (EMI). This device also features a special soft-start function to reduce in-rush current and provide better reliability in critical applications.
In terms of working principle, the IRF8910TRPBF utilizes a voltage-fed topology that functions by alternating the MOSFETs between saturation and the linear-triode mode. As a result, this device is capable of producing qualitatively superior audio power with higher peak power. The linear-triode mode enables the device to achieve both smooth-operating characteristics and efficiency.
The IRF8910TRPBF can be used in a variety of power management applications. For example, it can be used in high-performance buck converters, high-speed switching converters, and high-frequency synchronous rectification applications. Additionally, it can be used in various audio amplifier designs, motor drive systems, and electric vehicle chargers. The device is also ideal for applications that require short-circuit protection, as it can be used as an overload protection device to protect sensitive loads from overloads.
The overall performance and reliability of the IRF8910TRPBF make it an ideal choice for a wide variety of applications. Its advanced features and functionality make it a powerful platform for the development and implementation of various components in an extensive range of applications.
The specific data is subject to PDF, and the above content is for reference
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