Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	310W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2720pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	100nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	460 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRFB16N60LPBF Application Field and Working Principle

The IRFB16N60LPBF is a 16A, 600V N-Channel MOSFET device featuring a low profile and low on-resistance. It is suitable for a wide variety of applications such as power switches, rectifiers, and motor control.This power MOSFET has been designed primarily for use in DC/DC converters, Uninterruptible Power Supplies (UPSs), battery power supplies, motor control, and more. It has a wide output voltage range, low on-state resistance, fast switching, and low switching losses.

Design

The IRFB16N60LPBF is a 16A, 600V N-Channel power MOSFET. It is manufactured using advanced Super Junction technology, which allows for a lower on-state resistance and faster switching times. The device also has an integrated embedded V-Föhn gate, which improves gate charge circulation and reduces gate charge related losses.The IRFB16N60LPBF device has a low profile package (1mm low) and high current rating of 16A. This makes it ideal for high-density, high-frequency applications such as DC/DC converters, Uninterruptible Power Supplies (UPSs), and other applications.

Working Principle

The IRFB16N60LPBF is an N-Channel MOSFET, meaning that it is controlled by an external gate voltage. When the gate voltage is increased, the MOSFET will turn on, and when the gate voltage is decreased, the MOSFET will turn off.When the device is ON, the voltage across the drain and source (Vds) is equal to the applied voltage, while the current flow (Id) is proportional to the gate voltage (Vgs) and the gate capacitance. The MOSFET can also be used in reverse, where the voltage across the drain and source (Vds) is less than the applied voltage, and the current flow (Id) is proportional to the gate voltage (Vgs) and the gate capacitance.

Application Field

The IRFB16N60LPBF is suitable for a wide range of applications, such as DC/DC converters, Uninterruptible Power Supplies (UPSs), lighting systems, and battery power supplies. The device\'s integrated embedded V-Föhn gate reduces gate charge-related losses, making it ideal for high-frequency and high-density applications. The device is also suitable for use in motor control applications.The IRFB16N60LPBF can also be used as a power switch. It has a high current rating of 16A, making it ideal for switching high voltage and high current applications. The low on-resistance and fast switching time make the device suitable for power switches and rectifiers.

Conclusion

The IRFB16N60LPBF is a 16A, 600V N-Channel MOSFET device featuring a low profile and low on-state resistance. It is suitable for a wide variety of applications such as DC/DC converters, Uninterruptible Power Supplies (UPSs), battery power supplies, lighting systems, motor control, power switches, and rectifiers. The device is manufactured using advanced Super Junction technology and has an integrated embedded V-Föhn gate, which improves gate charge circulation and reduces gate charge-related losses.

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