IRFB9N30A Allicdata Electronics
Allicdata Part #:

IRFB9N30A-ND

Manufacturer Part#:

IRFB9N30A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 300V 9.3A TO-220AB
More Detail: N-Channel 300V 9.3A (Tc) 96W (Tc) Through Hole TO-...
DataSheet: IRFB9N30A datasheetIRFB9N30A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFB9N30A is a popular technology used in a variety of applications, and is classified as a single N-channel MOSFET. The device features high speed switching, high input impedance and good linearity, making it ideal for use in high performance power management systems. It is also known for its low on-state resistance and high junction temperature tolerance.The IRFB9N30A is a popular technology used in a variety of electrical and electronics applications. It is used in power management systems, power switching circuits and power supplies, audio amplifiers and voltage regulators, and DC and AC motors. It is also used in HVAC systems, electrical and phone line protection systems, light dimming circuits and other applications where a MOSFET is needed.

The IRFB9N30A is a three-terminal device containing a P-channel depletion mode MOSFET. It is commonly used in applications where power switching, speed switching and linearity are required. The device has a drain-source voltage (VDS) of 600 volts and a drain current of 30 amperes. As with most MOSFETs, the IRFB9N30A is also an insulated gate device. It works by using its gate to open or close a conducting path between the drain and source. When the gate is charged with a voltage, current flows through the device. When the gate voltage is no longer present, the device is turned off.

The IRFB9N30A has a high input impedance, which ensures that the gate voltage does not significantly affect the device on-state resistance. This makes the device ideal for linear applications such as amplifiers or DC power supplies. It also has a low switching time, making it useful in applications such as LED drivers, motor control circuits and H-bridge controllers. The device has a maximum junction temperature of 175°C and an operating temperature range of -55°C to 150°C. This makes it suitable for a wide range of applications, from industrial to consumer.

The IRFB9N30A can be used in both high and low power switching applications. It is also cost effective, making it a popular choice for use in high power applications such as motor control systems and power supplies. The device has good linearity, meaning that it is suitable for use in audio amplifiers and voltage regulators. It is also known for its low on-state resistance, high speed switching and high input impedance. The IRFB9N30A is a versatile device and can be used in a variety of electronic applications.

Overall, the IRFB9N30A is a popular device and is used in a variety of applications. Its high speed switching capabilities, linearity and low on-state resistance make it ideal for use in power management systems, power switching circuits and power supplies, audio amplifiers and voltage regulators, and DC and AC motors. Its high input impedance ensures that the device’s gate voltage does not significantly affect the device on-state resistance. It also has a high junction temperature tolerance and a wide operating temperature range, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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